S. Noll

Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs

O. Ambacher, S. Schwaiger, W. Daves, 2016 .

Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress

S. Noll, O. Ambacher, S. A. Jauss, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Investigation of the reliability of 4H-SiC MOS devices for high temperature applications

Lothar Frey, Heiner Ryssel, Anton J. Bauer, 2011, Microelectron. Reliab..

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

R. Quay, I. Kallfass, T. Kaden, 2021, IEEE Transactions on Power Electronics.

Hypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate Stress

D. Krebs, J. Baringhaus, S. Noll, 2023, Materials Science Forum.

Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability

M. Rambach, M. Grieb, S. Noll, 2013 .

Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi

Lothar Frey, Anton J. Bauer, Michael Grieb, 2013 .