M. di-Forte-Poisson

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

M. Meneghini, G. Meneghesso, A. Chini, 2015, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.