T. O'Hanlon

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

Matthew K. Horton, C. Humphreys, R. Oliver, 2017, Nano letters.

Carrier localization in the vicinity of dislocations in InGaN

Matthew K. Horton, C. Humphreys, R. Oliver, 2017 .

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced.

R. Oliver, T. Zhu, F. Massabuau, 2021, Ultramicroscopy.

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques.

R. Oliver, M. Kappers, F. Massabuau, 2020, Ultramicroscopy.

Directly correlated microscopy of trench defects in InGaN quantum wells.

R. Oliver, M. Kappers, F. Massabuau, 2021, Ultramicroscopy.