Bing-Ruey Wu

Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells

Chao-Hsin Wu, Ching-Fuh Lin, Di-Ku Yu, 2003, SPIE OPTO.

Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells

Yi-Shin Su, Ching-Fuh Lin, Di-Ku Yu, 2002, SPIE OPTO.

Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution

Tien-Tsorng Shih, Ching-Fuh Lin, Bing-Ruey Wu, 2001, SPIE OPTO.

Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells

Tien-Tsorng Shih, Bing-Ruey Wu, Lih-Wen Laih, 2001, SPIE OPTO.

Semiconductor lasers tunable from 1.3 μm to 1.54 μm for optical communication

Yi-Shin Su, Ching-Fuh Lin, Di-Ku Yu, 2002, SPIE OPTO.

Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous fT, fMAX ≫ 400 GHz

Bing-Ruey Wu, M. Feng, W. Snodgrass, 2007, 2007 IEEE International Electron Devices Meeting.

Extremely broadband InGaAsP/InP superluminescent diodes

Tien-Tsorng Shih, Ching-Fuh Lin, Bing-Ruey Wu, 2000 .

External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication

Yi-Shin Su, Ching-Fuh Lin, Bing-Ruey Wu, 2002 .