Emmerich Bertagnolli

Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics

S. Abermann, J. K. Efavi, G. Sjöblom, 2007, Microelectron. Reliab..

Silicon bipolar chipset with maximum data rates from 10 to 23 Gbit/s for optical communications

Emmerich Bertagnolli, J. Hauenschild, Hans-Martin Rein, 1991 .

A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider

Emmerich Bertagnolli, J. Hauenschild, Hans-Martin Rein, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

Silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s

Emmerich Bertagnolli, Hans-Martin Rein, A. Felder, 1992 .

Silicon bipolar technology and circuits for optical communications at data rates above 10 GBit/s

Emmerich Bertagnolli, J. Popp, J. Hauenschild, 1993 .

Nanowire-metal heterostructures for high performance MOSFETs

Emmerich Bertagnolli, Alois Lugstein, T. Burchhart, 2010, Elektrotech. Informationstechnik.