Catherine Dubourdieu

发表

Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Maurice Kahn, Christophe Vallée, Emmanuel Defay, 2007, Microelectron. Reliab..

Memristive devices: an interconnect solution for matrix-based architectures?

Catherine Dubourdieu, Fabien Alibart, Sebastien Le Beux, 2014 .

Effect of substrate nitridation on the electrical properties followed of high-k films

Ian W. Boyd, Barry O'Sullivan, Catherine Dubourdieu, 2001 .

Strain Relaxation in Single Crystal SrTiO3 Grown on Si (001) by Molecular Beam Epitaxy

Catherine Dubourdieu, Alexander A. Demkov, N. David Theodore, 2012 .

Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Catherine Dubourdieu, Sergei V. Kalinin, Sergei V Kalinin, 2013, Nature nanotechnology.

Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices

Catherine Dubourdieu, Fabien Alibart, Gilbert Sassine, 2016 .

The Quantum Metal Ferroelectric Field-Effect Transistor

David J. Frank, Paul M. Solomon, Catherine Dubourdieu, 2014, IEEE Transactions on Electron Devices.

Metal-Insulator-Metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

Catherine Dubourdieu, Serge Blonkowski, Olivier Joubert, 2004 .

Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

Ian W. Boyd, Catherine Dubourdieu, Serge Blonkowski, 2006 .

Erratum: Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode (Nature Nanotechnology (2013) 8 (748-754))

David J. Frank, Catherine Dubourdieu, Alexander A. Demkov, 2013 .

A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States.

Catherine Dubourdieu, Bipin Rajendran, B. Rajendran, 2016, Nano letters.

Pulsed injection MOCVD of functional electronic oxides

Catherine Dubourdieu, M. Rosina, Adulfas Abrutis, 2000 .