R. Deshmukh

发表

Compairing FinFETs: SOI Vs Bulk: Process variability, process cost, and device performance

R. Deshmukh, Apurva Khanzode, Sandeep Kakde, 2015, Journées Francophones d'Ingénierie des Connaissances.

Aspects of Gate Design for FinFET Effect of Gate Material Work Function and Dielectric constant ( k ) and Oxide Thickness ( tOX ) on the Performance of SOI FinFET

P. Dakhole, R. Deshmukh, 2012 .