M. Ogura

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

Y. Nozawa, T. Toyama, Y. Shimizu, 2012 .

Development of InxGa1−xAs-based ohmic contacts for p-type GaAs by radio-frequency sputtering

M. Murakami, M. Ogura, 1998 .

Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts

Tetsuya Suemitsu, Kenji Shiojima, T. Suemitsu, 2001 .

Effect of solute silicon on hydrogen precipitation in aluminum

N. Imanishi, M. Ikeda, A. Itoh, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).