Mehak Ashraf Mir

A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

G. Fiori, T. Mueller, E. G. Marín, 2021, IEEE Transactions on Electron Devices.

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2023, IEEE International Reliability Physics Symposium.