A.T. Krishnan

Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

Yu Cao, Wenping Wang, V. Reddy, 2007, IEEE Transactions on Device and Materials Reliability.

SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

S. Krishnan, J. Rosal, V. Reddy, 2006, 2006 International Electron Devices Meeting.

A charge damage study using an electron beam low k treatment

A.T. Krishnan, Changming Jin, E. Micler, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

A.T. Krishnan, P. Nicollian, R. Khamankar, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization

S. Mahapatra, F. Nouri, A.T. Krishnan, 2006, 2006 International Electron Devices Meeting.

Analytic Extension of the Cell-Based Oxide Breakdown Model to Full Percolation and its Implications

A.T. Krishnan, P.E. Nicollian, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Impact of gate area on plasma charging damage: the "reverse" antenna effect

A.T. Krishnan, P. Nicollian, S. Krishnan, 2002, Digest. International Electron Devices Meeting,.

The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

A.T. Krishnan, P.E. Nicollian, C.A. Chancellor, 2006, 2006 International Electron Devices Meeting.

NBTI: An Atomic-Scale Defect Perspective

S. Krishnan, A.T. Krishnan, J.P. Campbell, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.