C. H. Lee

发表

On flow uniformity in various interconnects and its influence to cell performance of planar SOFC

S. S. Shy, C. M. Huang, C. H. Lee, 2008 .

Performance Measurements of a Single-Cell Stack Using Various Designs of Flow Distributors for Planar SOFC

S. C. Huang, S. S. Shy, C. M. Huang, 2009 .

Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-

C. H. Lee, K. Nagashio, A. Toriumi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Material potential and scalability challenges of germanium CMOS

C. H. Lee, K. Nagashio, A. Toriumi, 2011, 2011 International Electron Devices Meeting.

Record-high electron mobility in Ge n-MOSFETs exceeding Si universality

C. H. Lee, K. Nagashio, A. Toriumi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Ge MOSFETs performance: Impact of Ge interface passivation

A. Toriumi, K. Nagashio, C. H. Lee, 2010, 2010 International Electron Devices Meeting.

Design and demonstration of reliability-aware Ge gate stacks with 0.5 nm EOT

C. H. Lee, A. Toriumi, T. Nishimura, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Infinitely High Etch Selectivity of Si3N4 Layer to ArF Photoresist in Dual-Frequency Superimposed Capacitively Coupled Plasmas

C. H. Lee, N. Lee, C. Park, 2007 .

Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

C. H. Lee, J. Kim, Kyu-Tae Kim, 1999 .

Growth and structural characteristics of GaN∕AlN/nanothick γ-Al2O3∕Si (111)

Y. J. Lee, C. H. Lee, J. Kwo, 2008 .

Characterization and fabrication of ZnSe epilayer on porous silicon substrate

C. H. Lee, C. C. Chang, 2000 .

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

C. H. Lee, G. Ng, Zhihong Liu, 2010 .

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

C. H. Lee, G. Ng, K. Radhakrishnan, 2010 .

Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

C. H. Lee, N. Lee, G. Kwon, 2005 .

Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics

C. H. Lee, J. Kwo, M. Hong, 2008 .

Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge

C. H. Lee, K. Nagashio, A. Toriumi, 2013, 2013 IEEE International Electron Devices Meeting.

The study of highly crystalline ZnSe growth on porous silicon

C. H. Lee, C. C. Chang, 2001 .

High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon

C. H. Lee, G. Ng, Zhen Liu, 2007 .

Experimental study of carrier transport in ultra-thin body GeOI MOSFETs

C. H. Lee, K. Nagashio, A. Toriumi, 2011, IEEE 2011 International SOI Conference.

Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

C. H. Lee, K. Nagashio, A. Toriumi, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Heat flow in Korea

C. H. Lee, H. Mizutani, C. C. Chang, 1970 .