Yoshimi Yamashita

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2001 .

Asymmetric overhang in electron-beam resist by direct writing for a recessed-offset-gate GaAs MESFET

H. Ishiwari, Yoshimi Yamashita, K. Kosemura, 1987 .

Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate

Takahiro Kitada, Issei Watanabe, Toshiaki Matsui, 2006 .

Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications

Toshiaki Matsui, M. Kiyokawa, Yoshimi Yamashita, 2000 .

Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphire

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2003 .

Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2008 .

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2004 .

High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2006 .

Low Noise HEMT with Self-Aligned Gate Structure

M. Niori, Masayuki Abe, K. Joshin, 1984 .

Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs

Shinichi Takagi, Yoshimi Yamashita, Naoharu Sugiyama, 2007 .

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

AIGaN/GaN MIS-HEMTs with f/sub T/ of 194 GHz at 16 K

Issei Watanabe, Toshiaki Matsui, Yoshimi Yamashita, 2008 .

InSb-based HEMT with over 300 GHz-fT using evaporated SiOx film

Akifumi Kasamatsu, Issei Watanabe, Sachie Fujikawa, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2001 .

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .