Takashi Mimura

M. Higashiwaki, Toshiaki Matsui, Akira Endoh, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2004 .

High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2006 .

Selective Dry Etching of AlGaAs-GaAs Heterojunction

K. Joshin, Kohki Hikosaka, Takashi Mimura, 1981 .

Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

Toshiaki Matsui, Masataka Higashiwaki, Takashi Mimura, 2006 .

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE

Takashi Mimura, Satoshi Hiyamizu, Hisao Hashimoto, 1981 .

30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

Toshiaki Matsui, Masataka Higashiwaki, Takashi Mimura, 2006 .

A 45 K-gate HEMT array with 35-ps DCFL and 50-ps BDCFL gates

M. Suzuki, Masayuki Abe, S. Notomi, 1991 .

High Electron Mobility Transistor Logic

Masayuki Abe, K. Joshin, Kohki Hikosaka, 1981 .

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2001 .

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

Toshiaki Matsui, Masataka Higashiwaki, Takashi Mimura, 2008 .

Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

Toshiaki Matsui, Masataka Higashiwaki, Jun Suda, 2007 .

A 40-ps high electron mobility transistor 4.1 K gate array

M. Suzuki, Masayuki Abe, Takashi Mimura, 1988 .

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Recent advances in ultrahigh-speed HEMT LSI technology

M. Suzuki, Masayuki Abe, M. Nakayama, 1989 .