Satoshi Hiyamizu

发表

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2001 .

Heavily Si-doped InGaAs lattice-matched to InP grown by MBE

Satoshi Hiyamizu, S. Hiyamizu, T. Fujii, 1986 .

Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

M. Ito, Osamu Wada, Satoshi Hiyamizu, 1983 .

Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate

Takahiro Kitada, Issei Watanabe, Toshiaki Matsui, 2006 .

Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications

Toshiaki Matsui, M. Kiyokawa, Yoshimi Yamashita, 2000 .

Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphire

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2003 .

A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

Yoshiaki Nakata, Satoshi Hiyamizu, Shunichi Muto, 1987 .

Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs

M. Higashiwaki, Toshiaki Matsui, Akira Endoh, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Toshiaki Matsui, Masataka Higashiwaki, Akira Endoh, 2004 .

Monolithic 1×4 Array of Uniform Radiance AlGaAs–GaAs LED's Grown by Molecular Beam Epitaxy

Osamu Wada, Satoshi Hiyamizu, Teruo Sakurai, 1982 .

High performance AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors fabricated using SiN/SiO2/SiN triple-layer insulators

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2006 .

Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy.

Takahiro Kitada, Takeharu Motokawa, Satoshi Hiyamizu, 1997 .

Photoreflectance and Photoluminescence Study of (GaAs)m/(AlAs)5 (m=3-11) Superlattices: Direct and Indirect Transition

Kenji Taniguchi, Chihiro Hamaguchi, Kenji Imanishi, 1989 .

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE

Takashi Mimura, Satoshi Hiyamizu, Hisao Hashimoto, 1981 .

High Electron Mobility Transistor Logic

Masayuki Abe, K. Joshin, Kohki Hikosaka, 1981 .

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Toshiaki Matsui, Akira Endoh, Yoshimi Yamashita, 2001 .

A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

Naoki Yokoyama, Hidetoshi Nishi, Satoshi Hiyamizu, 1985 .

Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE

Yoshiaki Nakata, Satoshi Hiyamizu, Shunichi Muto, 1986 .

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE

Naoki Yokoyama, Satoshi Hiyamizu, Shunichi Muto, 1986 .