James R. Shealy

Lester F. Eastman, William J. Schaff, James R. Shealy, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Self-heating and microwave noise in AlGaN/GaN

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .

Dynamic loadline analysis of AlGaN/GaN HEMTs

Lester F. Eastman, V. Kaper, James R. Shealy, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer

Brian K. Ridley, William J. Schaff, James R. Shealy, 2007 .

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 1999 .

Effects of rapid thermal annealing and SiO2 encapsulation on GaInAs/AlInAs heterostructures

James R. Shealy, J. Y. Chi, D. P. Bour, 1990 .

Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias

Lester F. Eastman, V. Kaper, James R. Shealy, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 2000 .

Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

James R. Shealy, Joseph A. Smart, J. Shealy, 2001 .

One‐step two‐level etching technique for monolithic integrated optics

W. J. Grande, James R. Shealy, W. D. Braddock, 1987 .

Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions

Lester F. Eastman, V. Kaper, James R. Shealy, 2003 .

X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator

V. Kaper, James R. Shealy, T. Prunty, 2003 .

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

Lester F. Eastman, William J. Schaff, James R. Shealy, 2001 .

Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .

Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling

Shawn R. Gibb, James R. Shealy, Jeffrey B. Shealy, 2016, 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Lester F. Eastman, V. Kaper, James R. Shealy, 2002 .

High-power, high-efficiency 770 nm 2D laser diode array

A. Rosen, J. C. Petheram, James R. Shealy, 1988 .

Degradation characteristics of AlGaN-GaN high electron mobility transistors

Lester F. Eastman, Ho-Young Cha, James R. Shealy, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

A new technique for gettering oxygen and moisture from gases used in semiconductor processing

James R. Shealy, Jerry M. Woodall, J. Shealy, 1982 .

Efficient, high-power (> 150 mW) grating surface emitting lasers

Nils W. Carlson, Jerome K. Butler, W. F. Reichert, 1988 .

Growth and passivation of AlGaN/GaN heterostructures

B. K. Ridley, James R. Shealy, B. Ridley, 2003 .

AlGaN/GaN high electron mobility transistors on Si(111) substrates

Yu Wang, Noel C. MacDonald, J. J. Komiak, 2001 .

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Josef Zweck, Oliver Ambacher, Wolfgang Gebhardt, 2000 .