Nobuyuki Sugii

发表

A 53µW −82dBm sensitivity 920MHz OOK receiver design using bias switch technique on 65nm SOTB CMOS technology

Hoang Minh Thien, Nobuyuki Sugii, Koichiro Ishibashi, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode

Cong-Kha Pham, Kimiyoshi Usami, Hideharu Amano, 2014, 2014 IEEE Hot Chips 26 Symposium (HCS).

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2014, Microelectron. Reliab..

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011 .

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Introduction to the Special Section on the 2017 IEEE S3S Conference

Ali Khakifirooz, Nobuyuki Sugii, 2018 .

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM

Nobuyuki Sugii, Toshitsugu Sakamoto, Takumi Hasegawa, 2015, IEEE Micro.

Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM

Nobuyuki Sugii, Toshitsugu Sakamoto, Xu Bai, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

A 44μW/10MHz minimum power operation of 50K logic gate using 65nm SOTB devices with back gate control

Cong-Kha Pham, Nobuyuki Sugii, Koichiro Ishibashi, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Road to Vmin=0.4V LSIs with least-variability FDSOI and back-bias control

Nobuyuki Sugii, 2011, IEEE 2011 International SOI Conference.

Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2016, IEEE Transactions on Electron Devices.

Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET

Nobuyuki Sugii, Ryuta Tsuchiya, Takashi Ishigaki, 2010 .

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

SOTB technology, which enables perpetually reliable CPU for IoT applications

Kazutoshi Kobayashi, Nobuyuki Sugii, Koichiro Ishibashi, 2015, 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM

Nobuyuki Sugii, Toshitsugu Sakamoto, Takumi Hasegawa, 2015, 2015 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS XVIII).

Introduction to the Special Section on the 2018 IEEE S3S Conference

Nobuyuki Sugii, Ali Khakifirooz, 2019 .

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

A 1.36 μW 312–315 MHz synchronized-OOK receiver for wireless sensor networks using 65 nm SOTB CMOS technology

Nobuyuki Sugii, Koichiro Ishibashi, Minh-Thien Hoang, 2016 .

Introduction to the Special Section on the 2019 IEEE S3S Conference

Nobuyuki Sugii, Ali Khakifirooz, 2020 .

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008, Microelectron. Reliab..

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications

Nobuyuki Sugii, Koichiro Ishibashi, Junya Kikuchi, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Nobuyuki Sugii, Koichiro Ishibashi, Toshiro Hiramoto, 2014 .

Statistical analysis of four write stability metrics in fully depleted silicon-on-thin-BOX (SOTB) and bulk SRAM cells at low supply voltage

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Design method for rapid customization of MEMS sensors

Hiroaki Hasegawa, Nobuyuki Sugii, Shinji Nishimura, 2017, 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

A 400mV 0.59mW low-power CAM-based pattern matching system on 65nm SOTB process

Duc-Hung Le, Cong-Kha Pham, Hong-Thu Nguyen, 2015, TENCON 2015 - 2015 IEEE Region 10 Conference.

Low-Power Electron Devices

Nobuyuki Sugii, 2013 .

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

The Future of Ultra-Low Power SOTB CMOS Technology and Applications

Makoto Ikeda, Nobuyuki Sugii, Shiro Kamohara, 2020 .

Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process

Duc-Hung Le, Cong-Kha Pham, Xuan-Thuan Nguyen, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Controllable Inverter DelayandSuppressing VthFluctuation Technology inSilicon onThinBOX Featuring DualBack-Gate BiasArchitecture

Nobuyuki Sugii, Masanao Yamaoka, Y. Morita, 2007 .

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

n~+およびp~+Si底部電極上にCeO_xバッファ層を持つ薄いSiO_2層の抵抗スイッチング特性【Powered by NICT】

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016 .

A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end

Nobuyuki Sugii, Koichiro Ishibashi, Minh-Thien Hoang, 2015, IEICE Electron. Express.

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006, IEICE Electron. Express.

A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode

Hideharu Amano, Cong-Kha Pham, Kazutoshi Kobayashi, 2015 .

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology

Hideharu Amano, Duc-Hung Le, Cong-Kha Pham, 2014, 2014 IEEE COOL Chips XVII.

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

Nobuyuki Sugii, Masaharu Kobayashi, Toshiro Hiramoto, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

A 361nA thermal run-away immune VBB generator using dynamic substrate controlled charge pump for ultra low sleep current logic on 65nm SOTB

Nobuyuki Sugii, Koichiro Ishibashi, Shiro Kamohara, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Growth of oxide superconducting thin films by plasma-enhanced MOCVD

Nobuyuki Sugii, Keiichi Kanehori, 1991, Other Conferences.

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

Hideharu Amano, Kazutoshi Kobayashi, Kimiyoshi Usami, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

Nobuyuki Sugii, N. Sugii, 2001 .

Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

Low-on-resistance strain-controlled LDMOS transistors for 0.25-μm power ICs

Nobuyuki Sugii, Yoshinobu Kimura, Masafumi Miyamoto, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Mobility Degradation Analysis for La2O3 nMISFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster

Nobuyuki Sugii, Toshiro Hiramoto, Hidekazu Oda, 2008 .

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Katsuyoshi Washio, Digh Hisamoto, 2002 .

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy

Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao, 1998 .

Mobility model for advanced SOI-MOSFETs including back-gate contribution

Hans Jurgen Mattausch, Nobuyuki Sugii, M. Miura-Mattausch, 2015 .

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014 .

Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current

Nobuyuki Sugii, Toshiro Hiramoto, Hidekazu Oda, 2009 .

Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs and Bulk MOSFETs

Nobuyuki Sugii, Toshiro Hiramoto, Hideki Makiyama, 2012 .

Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Nobuyuki Sugii, Shinya Yamaguchi, Kiyokazu Nakagawa, 2001 .

Silicon light-emitting transistor for on-chip optical interconnection

Nobuyuki Sugii, Digh Hisamoto, Kazuyoshi Torii, 2006 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

Nobuyuki Sugii, Shinya Yamaguchi, Masanobu Miyao, 1999 .

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Nobuyuki Sugii, Hirofumi Shinohara, Toshiro Hiramoto, 2014 .

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

Nobuyuki Sugii, Toshiro Hiramoto, Toshiaki Iwamatsu, 2008 .

Impact of Thin La2O3 Insertion for HfO2 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008 .

Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Nobuyuki Sugii, 2014, IEEE Transactions on Electron Devices.

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2005 .

Effect of Oxygen for Ultra-Thin La2O3 Film Deposition

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Speed enhancement atVdd= 0.4 V and random τpdvariability reduction and analyisis of τpdvariability of silicon on thin buried oxide circuits

Nobuyuki Sugii, Koichiro Ishibashi, Hirofumi Shinohara, 2014 .

Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory

Nobuyuki Sugii, Tomohiro Yamashita, Toshiro Hiramoto, 2015 .