Nabil Sghaier

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications

Liviu Militaru, A. Souifi, Nabil Sghaier, 2006, Microelectron. J..

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator

Nicolas Baboux, M. Troudi, A. Kalboussi, 2009, Microelectron. J..

Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes

M. Troudi, A. Souifi, Nabil Sghaier, 2015, Microelectron. Reliab..

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique

Liviu Militaru, Nabil Sghaier, M'Hamed Trabelsi, 2007, Microelectron. J..

A new SIMPLORER model for single-electron transistors

Nicolas Baboux, M. Troudi, A. Kalboussi, 2007, Microelectron. J..

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

A. Souifi, Jean-Marie Bluet, Nabil Sghaier, 2006, Microelectron. J..

Remote Sensing Based Yield Estimation in a Stochastic Framework - Case Study of Durum Wheat in Tunisia

Michele Meroni, Olivier Leo, Michel M. Verstraete, 2013, Remote. Sens..

Evaluating NDVI Data Continuity Between SPOT-VEGETATION and PROBA-V Missions for Operational Yield Forecasting in North African Countries

Olivier Leo, Raul Lopez-Lozano, Nabil Sghaier, 2016, IEEE Transactions on Geoscience and Remote Sensing.