M. Feng

STUDY OF THE CONDUCTION BAND OFFSET ALIGNMENT CAUSED BY OXYGEN VACANCIES IN SIO2 LAYER AND ITS EFFECTS ON THE GATE LEAKAGE CURRENT IN NANO-MOSFETS

Mao Ling Feng, M. Feng, 2011 .

Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques

L. W. Cook, G. Stillman, M. Feng, 1980 .

Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

D. Barlage, J. Baker, G. Stillman, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

A study on the growth process for liquid phase epitaxy of GaN crystal using Na–Li–Ca flux

Zhenrong Li, S. Fan, Mingyue Ma, 2022, Materials Science in Semiconductor Processing.

Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si

R. Kaliski, D. McIntyre, M. Feng, 1988 .

Hydrogenation and subsequent hydrogen annealing of GaAs on Si

N. Holonyak, C. Ito, M. Feng, 1989 .

Activation of silicon ion-implanted gallium nitride by furnace annealing

G. Stillman, R. Dupuis, H. Kuo, 1999 .

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

J. M. Whelan, V. Eu, T. Zielinski, 1982 .