Guoguo Yan

发表

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Zhanwei Shen, Jun Chen, Xingfang Liu, 2020 .

Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates

Xingfang Liu, Wanshun Zhao, Z. Wang, 2012 .

Atomic Layer Deposition of BiFeO3 Thin Films Using β-Diketonates and H2O

F. Zhang, B. Liu, G. Yan, 2013 .

High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET

F. Zhang, Z. Wen, Zhanwei Shen, 2020, IEEE Transactions on Electron Devices.

Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

Zhanwei Shen, G. Yan, Xingfang Liu, 2021, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Study of morphology defects in 4H-SiC thick epitaxial layers grown on 4° off-axis Si-face substrates

G. Yan, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

B. Liu, G. Yan, Xingfang Liu, 2013, Materials.

A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region

Z. Wen, Zhanwei Shen, G. Yan, 2017, IEEE Electron Device Letters.

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Zhanwei Shen, G. Yan, Xingfang Liu, 2022, Crystals.

Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition*

F. Zhang, Zhanwei Shen, G. Yan, 2016 .

Analysis and modeling of localized faceting on 4H‐SiC epilayer surfaces

Xingfang Liu, Z. Wang, Lin Dong, 2013 .

Electrochemical etching modes of 4H-SiC in KOH solutions

Xingfang Liu, Guosheng Sun, Yiping Zeng, 2023, Semiconductor Science and Technology.

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers

Zhanwei Shen, Jun Chen, Yawei He, 2019, Materials Science Forum.

Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2022, Semiconductor Science and Technology.

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

Zhanwei Shen, Yawei He, Xingfang Liu, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions

Zhanwei Shen, G. Yan, Xingfang Liu, 2022 .

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Wanshun Zhao, Lei Wang, Lin Dong, 2013 .

Mapping of micropipes and downfalls on 4H-SiC epilayers by Candela optical surface analyzer

Xingfang Liu, Lin Dong, Liu Zheng, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2019, Materials Science Forum.

SiC Warm-wall LPCVD growth on multiple 50-mm diameter wafers

Jin Ning, Xingfang Liu, Wanshun Zhao, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Characterization of epitaxial layers grown on 4H-SiC (000-1) substrates

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2022, Journal of Crystal Growth.

Optimized P-emitter doping for switching-off loss of superjunction 4H-SiC IGBTs

Zhanwei Shen, Xingfang Liu, Wanshun Zhao, 2016, 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss

S. Dimitrijev, Z. Wen, Zhanwei Shen, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

Xingfang Liu, Wanshun Zhao, Lei Wang, 2012 .

Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

Lei Wang, F. Zhang, Z. Wen, 2019, Chinese Physics B.

Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions

Xingfang Liu, Wanshun Zhao, Lei Wang, 2023, Micro and Nanostructures.