T. McNutt

High Temperature (250 deg C) SiC Power Module for Military Hybrid Electrical Vehicle Applications

B. McPherson, John P. Kajs, Scott G. Castagno, 2011 .

Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

A. Mantooth, J. Hornberger, A.B. Lostetter, 2004, 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720).

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

C. Scozzie, H. Hearne, V. Veliadis, 2008, IEEE Electron Device Letters.

Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices

C. Scozzie, V. Veliadis, T. McNutt, 2007, 2007 International Semiconductor Device Research Symposium.

Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

A. Mantooth, R. Singh, T. McNutt, 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

A 1680-V (at 1 {mA/cm}(2) ) 54-A (at 780 {W/cm}(2) ) Normally ON 4H-SiC JFET With 0.143- {cm}(2) Active Area

H. Hearne, Victor Veliadis, T. McNutt, 2008 .