Stéphane Adriaensen

发表

High-Temperature Accurate Characterization of SOI Bipolar/Diode Devices for their Applications in Precise High-Order Bandgap References

Denis Flandre, Stéphane Adriaensen, 2003 .

Conception d'une tension de référence bandgap d'ordre supérieur fonctionnant de 25 à 225°C dans une technologie CMOS-SOI 1.0 µm partiellement déplétée

Denis Flandre, Stéphane Adriaensen, S. Richter, 2003 .

Integrated sensors and electronic circuits in SOI technology for high-temperature applications

Denis Flandre, Stéphane Adriaensen, A. Viviani, 1998 .

Extraction of charge trapping parameters in FD SOI MOSFET oxides subjected to gamma-irradiation

Denis Flandre, Stéphane Adriaensen, V. S. Lysenko, 2005 .

Optimization of the operation of the thin-film SOI lateral bipolar transistor for high-temperature applications

Denis Flandre, Stéphane Adriaensen, 2000 .

25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2002 .

Ultra Low Power Analog Basic Blocks

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2001 .

Fully-Depleted SOI CMOS Technology for Heterogeneous Micropower, High-Temperature or RF Microsystems

Denis Flandre, Jean-Pierre Raskin, Stéphane Adriaensen, 2001 .

Conception de circuits analogiques micro-puissance en technologie CMOS-SOI

Denis Flandre, Stéphane Adriaensen, David Levacq, 2003 .

Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications

Denis Flandre, Stéphane Adriaensen, 2002 .

Low-Noise High-Temperature SOI Analog Circuits

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2000 .

SOI n-MOSFET low-frequency noise from full to partial depletion: measurements, modeling and implications for analog designs

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2001 .

A review of fully-depleted SOI CMOS technology for microsystems

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2000 .

Ultra-Low Power High-Temperature Voltage Reference Using Standard SOI CMOS Process

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2001 .

Analysis and Potential of the Bipolar- and Hybrid-Mode Thin-Film SOI MOSFETs for High-Temperature Applications

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2001 .

ULP basic blocks and their uses

Denis Flandre, Stéphane Adriaensen, David Levacq, 2005 .

A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

Influence of device engineering on the analog and RF performances of SOI MOSFETs

Denis Flandre, Jean-Pierre Raskin, Stéphane Adriaensen, 2003 .

LOW-NOISE SILICON-ON-INSULATOR HALL DEVICES

Denis Flandre, Stéphane Adriaensen, Christian Renaux, 2004 .

A Voltage Reference Compatible with Standard SO1 CMOS Processes and Consuming 1pA to 50nA from room temperature up to 3OOOC

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2002 .

High-temperature characterization of a PD SOI CMOS process with LDMOS and lateral bipolar structures

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 1999, HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372).

Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs

Denis Flandre, Stéphane Adriaensen, Youri Houk, 2004 .

SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250/spl deg/C

Denis Flandre, Stéphane Adriaensen, Vincent Dessard, 2002 .