K. M. Kim

发表

Fabrication of Semiconductor Nano - Structures for Quantum Devices

Y. J. Park, E. K. Kim, H. J. Kim, 2001 .

Crystal Growth from the Melt under Destabilizing Thermal Gradients

K. M. Kim, A. Witt, H. Gatos, 1972 .

Quantitative assessment of an integrated hydrodynamic thermal-capillary model for large-diameter Czochralski growth of silicon: comparison of predicted temperature field with experiment

K. M. Kim, D. E. Bornside, Robert A. Brown, 1993 .

Maximum length of large diameter Czochralski silicon single crystals at fracture stress limit of seed

K. M. Kim, P. Smetana, 1990 .

Quantitative Analysis of the Effects of Destabilizing Vertical Thermal Gradients on Crystal Growth and Segregation: Ga‐Doped Ge

K. M. Kim, August F. Witt, Harry C. Gatos, 1978 .

Computer Simulation and Controlled Growth of Large Diameter Czochralski Silicon Crystals

K. M. Kim, A. Kran, P. Smetana, 1983 .

Etch pits and dislocation in {1̄012} Czochralski sapphire wafers

K. M. Kim, S. H. McFarlane, 1978 .

Analysis of solute redistribution in the fractionally solidified Al ingot

K. M. Kim, E. Yoon, 1996 .

A crystal growth method based on controlled power reduction under stabilising thermal gradients

K. M. Kim, A. Witt, H. Gatos, 1971 .

Striations in CZ silicon crystals grown under various axial magnetic field strengths

K. M. Kim, P. Smetana, 1985 .

Suppression of Thermal Convection by Transverse Magnetic Field

K. M. Kim, 1982 .

Morphological instability under constitutional supercooling during the crystal growth of InSb from the melt under stabilizing thermal gradient

K. M. Kim, 1978 .

Hydromagnetic flows and effects on Czochralski silicon crystals

K. M. Kim, W. E. Langlois, John S. Walker, 1993 .

Properties of Hg1−xCdxTe single crystals grown by THM

K. M. Kim, H. L. Park, S. Noh, 1987 .

Measurement of meniscus angle in laser heated float zone growth of constant diameter sapphire crystals

K. M. Kim, A. Dreeben, A. Schujko, 1980 .

Growth and characterization of silicon ribbons by the Inverted Stepanov process using pyrolytic boron nitride die

K. M. Kim, G. W. Cullen, S. Berkman, 1980 .

Maximum stable zone length in float‐zone growth of small‐diameter sapphire and silicon crystals

K. M. Kim, A. Dreeben, A. Schujko, 1979 .

Microdefects in small-diameter silicon crystals grown by the pedestal technique

K. M. Kim, 1979 .

Effect of Thermal Shock And Rapid Unloading On Mechanical Rock Properties

K. M. Kim, J. Kemeny, 2009 .

Interface Morphological Instability in Czochralski Silicon Crystal Growth from Heavily Sb‐Doped Melt

K. M. Kim, 1979 .

Segregation Behavior in a Stationary Vertical Zone with Converging Interfaces: Pressure‐Induced Segregation Effects

K. M. Kim, A. Witt, H. Gatos, 1974 .

Computer simulation of boron transport in magnetic Czochralski growth of silicon

K. M. Kim, W. E. Langlois, 1986 .

Dislocations in {1012} sapphire ribbons grown by the EFG process

K. M. Kim, R. Novak, 1980 .