Ute Zeimer

发表

Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars

Bernd Sumpf, Götz Erbert, Mathias Ziegler, 2007, SPIE LASE.

The impact of external optical feedback on the degradation behavior of high-power diode lasers

Paul Michael Petersen, Martin Hempel, Jens W. Tomm, 2013, Photonics West - Lasers and Applications in Science and Engineering.

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery

Christian Boit, Günther Tränkle, Anna Mogilatenko, 2014, Microelectron. Reliab..

Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers

Peter Michael Smowton, Martin Hempel, Jens W. Tomm, 2013, Photonics West - Optoelectronic Materials and Devices.

Catastrophic optical damage in GaAlAs/GaAs laser diodes

G. Erbert, A. Klehr, Ute Zeimer, 1987 .

Si Doping of GaN in Hydride Vapor-Phase Epitaxy

M. Weyers, G. Tränkle, Ute Zeimer, 2013, Journal of Electronic Materials.

Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow–green emission by frequency conversion

Katrin Paschke, M. Weyers, Frank Bugge, 2015 .

Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers

M. Weyers, Frank Bugge, Götz Erbert, 1997 .

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Frank Brunner, M. Weyers, Günther Tränkle, 2008 .

Comparison of AlGaAs and AlInP cladding layers for red edge-emitting lasers

Andrea Knigge, Hans Wenzel, Ute Zeimer, 2004 .

12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

M. Weyers, Frank Bugge, Hans Wenzel, 2001 .

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

M. Weyers, G. Tränkle, Bernd Sumpf, 2006 .

Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

M. Weyers, Frank Bugge, Ute Zeimer, 1996 .

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Christoph Reich, Michael Kneissl, Martin Guttmann, 2018 .

Nano-optical analysis of GaN-based diode lasers

Thomas Elsaesser, Michael Kneissl, Jens W. Tomm, 2014 .

Defect evolution during catastrophic optical damage of diode lasers

Thomas Elsaesser, Martin Hempel, Jens W. Tomm, 2011 .

Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

Katrin Paschke, Bernd Sumpf, Frank Bugge, 2018, Journal of Crystal Growth.

Freestanding two inch c‐plane GaN layers grown on (100) γ‐lithium aluminium oxide by hydride vapour phase epitaxy

M. Weyers, G. Tränkle, Peter Reiche, 2006 .

HVPE of AlxGa1−xN layers on planar and trench patterned sapphire

M. Weyers, Wilfred John, Ute Zeimer, 2012 .

Highly strained very high-power laser diodes with InGaAs QWs

Heiko Kissel, M. Weyers, Frank Bugge, 2003 .

Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

M. Weyers, G. Tränkle, Anna Mogilatenko, 2013 .

Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes

M. Weyers, Olaf Brox, Frank Bugge, 2011 .

Thermal properties and degradation behavior of red-emitting high-power diode lasers

Bernd Sumpf, Götz Erbert, Jens W. Tomm, 2006 .

MOVPE growth of tunable DBR laser diode emitting at 1060 nm

M. Weyers, Andreas Klehr, Frank Bugge, 1998 .

Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

Sven Einfeldt, Anna Mogilatenko, Michael Kneissl, 2013 .

N-type doping of HVPE-grown GaN using dichlorosilane

G. Tränkle, Ute Zeimer, Eberhard Richter, 2006 .

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Peter Michael Smowton, Mathias Ziegler, Jens W. Tomm, 2010 .

Optimised proton implantation step for vertical-cavity surface-emitting lasers

Peter Ressel, Juergen Sebastian, Ute Zeimer, 1993 .

High-power red laser diodes grown by MOVPE

M. Weyers, Bernd Sumpf, Hans Wenzel, 2007 .

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

Sven Einfeldt, Michael Kneissl, Jens Rass, 2017 .

Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers

Thomas Elsaesser, Mathias Ziegler, Jens W. Tomm, 2010 .

Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

M. Weyers, G. Tränkle, Anna Mogilatenko, 2013, Journal of Electronic Materials.

Properties of As+-implanted and annealed GaAs and inGaAs quantum wells: Structural and band-structure modifications

Heiko Kissel, M. Weyers, Jens W. Tomm, 2004 .

Semi‐polar (112¯2) ‐GaN templates grown on 100 mm trench‐patterned r‐plane sapphire

Frank Brunner, Wilfred John, Ute Zeimer, 2015 .

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

M. Weyers, S. Hähle, P. Kurpas, 1997 .

Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors

G. Tränkle, Joachim Würfl, Nidhi Chaturvedi, 2006 .

High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation

Paul Crump, Ute Zeimer, Gotz Erbert, 2015, IEEE Photonics Technology Letters.