Karl Opsomer

发表

Novel EUV mask absorber evaluation in support of next-generation EUV imaging

Vicky Philipsen, Eric Hendrickx, Frank Scholze, 2018, Photomask Technology.

(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells

Wilfried Vandervorst, Michel Houssa, Karl Opsomer, 2013 .

Doped GeSe materials for selector applications

Bogdan Govoreanu, Gouri Sankar Kar, Sergiu Clima, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Mask absorber for next generation EUV lithography

Patrick Jaenen, Vicky Philipsen, Victor Soltwisch, 2020, Photomask Technology.

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

Mask absorber development to enable next-generation EUVL

Vicky Philipsen, Eric Hendrickx, Andreas Erdmann, 2019, Photomask Japan.

Conductive filaments multiplicity as a variability factor in CBRAM

Wilfried Vandervorst, Malgorzata Jurczak, Ludovic Goux, 2015, 2015 IEEE International Reliability Physics Symposium.

Ni-Al Alloys as Alternative EUV Mask Absorber

Vicky Philipsen, Eric Hendrickx, Marc Heyns, 2018 .

First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials

Torsten Feigl, Vicky Philipsen, Philipp Naujok, 2021, Photomask Technology.

Study of novel EUVL mask absorber candidates

Patrick Jaenen, Vicky Philipsen, Victor Soltwisch, 2021 .

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Dirk Wouters, Malgorzata Jurczak, Jorge Kittl, 2013 .

Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Christoph Adelmann, Bart Schepers, Geoffrey Pourtois, 2012 .

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction

Christoph Adelmann, Thomas Mikolajick, Jacob L. Jones, 2018 .

Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011, 2011 3rd IEEE International Memory Workshop (IMW).

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices.

Wilfried Vandervorst, Robin Degraeve, Malgorzata Jurczak, 2015, The journal of physical chemistry letters.

Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices

Wilfried Vandervorst, Malgorzata Jurczak, Ludovic Goux, 2014 .

3 rd Workshop on Metallization for Crystalline Silicon Solar cells Electroless nickel deposition and silicide formation for advanced front side metallization of industrial silicon solar cells

Robert Mertens, Hugo Bender, Richard Russell, 2011 .

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

Wilfried Vandervorst, Malgorzata Jurczak, Hugo Bender, 2014, Nano letters.

Study of amorphous Cu–Te–Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Malgorzata Jurczak, Ludovic Goux, Karl Opsomer, 2016 .

Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography

Vicky Philipsen, Eric Hendrickx, Marc Heyns, 2019, Journal of Vacuum Science & Technology B.

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)2/Al2O3 Filamentary Switching Devices.

Wilfried Vandervorst, Gouri Sankar Kar, Thomas Hantschel, 2018, ACS applied materials & interfaces.

Observation and Suppression of Nickel Germanide Overgrowth on Germanium Substrates with Patterned SiO2 Structures

Marc Meuris, David P. Brunco, Karl Opsomer, 2008 .

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.

Christopher J. Wilson, Philippe Roussel, Christoph Adelmann, 2016, ACS applied materials & interfaces.

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011 .

Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells.

Wilfried Vandervorst, Malgorzata Jurczak, Hugo Bender, 2013, ACS applied materials & interfaces.