Hiroshi Amano

发表

The electric compressor

Hiroshi Amano, Tomoyuki Sumi, 2012 .

Transverse-mode control in GaN-based laser diodes

Toshiyuki Sato, Theeradetch Detchprohm, Motoaki Iwaya, 2001, SPIE OPTO.

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, 2007, SPIE OPTO.

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

Motoaki Iwaya, Kazuyoshi Iida, Krishnan Balakrishnan, 2007, SPIE OPTO.

Reduction in operating voltage of UV laser diode

Motoaki Iwaya, Isamu Akasaki, Harumasa Yoshida, 2010, OPTO.

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2009, OPTO.

Detailed feasibility study on a flame detector using AlGaN photosensors

Akira Hirano, Motoaki Iwaya, Isamu Akasaki, 2000, Photonics West - Optoelectronic Materials and Devices.

Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure

Motoaki Iwaya, Satoshi Kamiyama, Toshiyuki Kondo, 2010, OPTO.

Photoluminescence study of near-surface GaN/AlN superlattices

Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, 2008, SPIE OPTO.

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, 2010, OPTO.

Reconstruction of a three-dimensional color-video of a point-cloud object using the projection-type holographic display with a holographic optical element.

Rintaro Miura, Yasuyuki Ichihashi, Tomoyoshi Shimobaba, 2020, Optics express.

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2009, OPTO.

Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, 2003, SPIE OPTO.

Development of UV-C laser diodes on AlN substrate

Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, 2021, OPTO.

The Evolution of Nitride-Based Light-Emitting Devices

Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, 2002 .

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 2001 .

High‐quality GaInN/GaN multiple quantum wells

Isamu Akasaki, Masayoshi Koike, Hiroshi Amano, 1996 .

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

Masahiro Ito, Isamu Akasaki, Yoshio Honda, 2016 .

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 1992 .

Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Isamu Akasaki, Hiroshi Amano, Tetsuya Takeuchi, 2000 .

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays

Yoshio Honda, Hiroshi Amano, Masahito Yamaguchi, 2014 .

Demonstration of diamond field effect transistors by AlN/diamond heterostructure

Masataka Imura, Meiyong Liao, Hiroshi Amano, 2011 .

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Yoshio Honda, Ho-Jun Lee, Hiroshi Amano, 2017 .

Pit formation in GaInN quantum wells

Isamu Akasaki, Hiroshi Amano, Y. Kaneko, 1998 .

Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Development of underfilling and encapsulation for deep-ultraviolet LEDs

Isamu Akasaki, Masamichi Ippommatsu, Hiroshi Amano, 2014 .

GaInN‐based solar cells using GaInN/GaInN superlattices

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Yoshio Honda, Hideaki Murotani, Hiroshi Amano, 2013 .

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 2001 .

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

Isamu Akasaki, Yoshio Honda, Masamichi Ippommatsu, 2017 .

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Kazuyoshi Iida, Masataka Imura, Motoaki Iwaya, 2006 .

Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Realization of extreme light extraction efficiency for moth‐eye LEDs on SiC substrate using high‐reflection electrode

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Optical Investigations of AlGaN on GaN Epitaxial Films

Isamu Akasaki, Jürgen Christen, Hiroshi Amano, 1999 .

Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

Isamu Akasaki, Hiroshi Amano, W. W. Chow, 2000 .

Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region

Yoshio Honda, Hiroshi Amano, Dong-Seon Lee, 2015 .

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Isamu Akasaki, Hiroshi Amano, H. Amano, 1997 .

Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition

Masaru Hori, Mineo Hiramatsu, Hiroshi Amano, 2005 .

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1989 .

Stress evolution during metalorganic chemical vapor deposition of GaN

Jung Han, Hiroshi Amano, S. J. Hearne, 1999 .

Study on the Main‐Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN‐Based DUV‐LEDs

Isamu Akasaki, Yoshio Honda, Masamichi Ippommatsu, 2018 .

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN

Motoaki Iwaya, Fernando Ponce, Daisuke Iida, 2009 .

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Isamu Akasaki, Hiroshi Amano, H. Amano, 2006 .

Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

Motoaki Iwaya, Isamu Akasaki, Nobuaki Hayashi, 2000 .

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Shigeru Nakagawa, Isamu Akasaki, Hiroshi Amano, 1998 .

Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure

Isamu Akasaki, T. Tanaka, Hiroshi Amano, 1994 .

Improvement of light extraction efficiency of 350‐nm emission UV light‐emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2014 .

Electron beam effects on blue luminescence of zinc-doped GaN

Takahiro Kozawa, Yoshikazu Ishii, Isamu Akasaki, 1988 .

AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN

Yoshio Honda, Hiroshi Amano, Tomoyuki Tanikawa, 2013 .

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

Isamu Akasaki, Shigetoshi Sota, Masayoshi Koike, 1995 .

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Isamu Akasaki, Shigetoshi Sota, Hiroshi Amano, 1997 .

Room Temperature Ultraviolet/Blue Light Emitting Devices Based on AlGaN/GaN Multi-Layered Structure

Isamu Akasaki, Hiroshi Amano, 1992 .

Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

III-Nitride Based Light Emitting Diodes and Applications

Hadis Morkoç, Jung Han, Hiroshi Amano, 2013 .

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

Hiroshi Amano, H. Amano, 2015 .

Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

Isamu Akasaki, Hiroshi Amano, H. Amano, 1990 .

Crystal growth of column III nitrides and their applications to short wavelength light emitters

Isamu Akasaki, Hiroshi Amano, H. Amano, 1995 .

Light-Emitting Diodes in the Solid-State Lighting Systems

Shuji Nakamura, Isamu Akasaki, Hiroshi Amano, .

Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

Hiroshi Amano, H. Amano, 2016 .

Optical Investigations of AlGaN on GaN Epitaxial Films

Isamu Akasaki, Jürgen Christen, Hiroshi Amano, 1998 .

Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures

Isamu Akasaki, Hiroshi Amano, Christian Wetzel, 1999 .

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

Masaru Hori, Mineo Hiramatsu, Hiroshi Amano, 2004 .

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells

Yoshio Honda, Hiroshi Amano, H. Amano, 2016 .

Control of stress and crystalline quality in GaInN films used for green emitters

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2008 .

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

Yoshio Honda, Hideaki Murotani, Hiroshi Amano, 2015 .

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2008 .

Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 2000 .

Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures

Isamu Akasaki, Shigetoshi Sota, Hiroshi Amano, 1998 .

Melt-back etching of GaN

Isamu Akasaki, Hiroshi Amano, Yawara Kaneko, 1997 .

Optical Properties of Strained AlGaN and GaInN on GaN

Isamu Akasaki, Shigetoshi Sota, Hiroshi Amano, 1997 .

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Atsushi Tanaka, Takashi Sekiguchi, Yoshio Honda, 2017 .

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

Isamu Akasaki, Hiroshi Amano, Bo Monemar, 2000 .

Photoluminescence of GaN: Effect of electron irradiation

Isamu Akasaki, Irina Buyanova, Hiroshi Amano, 1998 .

High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2001 .

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1993 .

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1991 .

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, 2007 .

Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 2001 .

GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB 2 ,(30 3 8) 4H-SiC and r -faced Sapphire.

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2004 .

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

Motoaki Iwaya, Akira Honshio, Satoshi Kamiyama, 2005 .

Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

Satoshi Kamiyama, Isamu Akasaki, Takayuki Sota, 2003 .

Optical band gap in Ga1−xInxN (0

Isamu Akasaki, Hiroshi Amano, Christian Wetzel, 1998 .

High efficiency violet to blue light emission in porous SiC produced by anodic method

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances

Lester F. Eastman, Jinwook Burm, Isamu Akasaki, 1997 .

The role of the multi buffer layer technique on the structural quality of GaN

Motoaki Iwaya, Isamu Akasaki, J. H. Mazur, 2000 .

Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire

Eicke R. Weber, Isamu Akasaki, Joel W. Ager, 1996 .

Low cost high voltage GaN polarization superjunction field effect transistors

Yusuke Kamiyama, Hiroshi Amano, Vineet Unni, 2017 .

Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

Hirofumi Kan, Harumasa Yoshida, Hiroshi Amano, 2007 .

Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double Heterostructure

Isamu Akasaki, Hiroshi Amano, Norikatsu Koide, 1993 .

Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells

Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, 2002 .

High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2013 .

Frontispiece: Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes (Phys. Status Solidi A 7/2011)

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .

III-nitride core–shell nanorod array on quartz substrates

Yoshio Honda, Ho-Jun Lee, Young-Dahl Jho, 2017, Scientific Reports.

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Photoemission lifetime of a negative electron affinity gallium nitride photocathode

Masao Tabuchi, Takashi Meguro, Hiroshi Amano, 2014 .

Strain Modification of GaN in AlGaN/GaN Epitaxial Films

Isamu Akasaki, Friedhelm Bechstedt, Hiroshi Amano, 1999 .

Resonant Raman scattering in hexagonal GaN

Isamu Akasaki, D. Behr, Hiroshi Amano, 1996 .

Discrete Stark‐Like Ladder in Piezoelectric GaInN/GaN Quantum Wells

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 1999 .

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2011 .

Surface‐mode stimulated emission from optically pumped GaInN at room temperature

Isamu Akasaki, Hiroshi Amano, H. Amano, 1995 .

Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1990 .

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 1999 .

Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures

Hiroshi Amano, Carl Hemmingsson, Galia Pozina, 2015, Scientific reports.

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2005 .

P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

Isamu Akasaki, Masayoshi Koike, Hiroshi Amano, 1994 .

Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates

Theeradetch Detchprohm, Satoshi Kamiyama, Isamu Akasaki, 2001 .

Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2010 .

Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances

Martin R. Hofmann, Isamu Akasaki, A. Euteneuer, 1997 .

Widegap Group-III Nitride Semiconductors for UV/Blue Light Emitting Devices

Isamu Akasaki, Hiroshi Amano, 1994 .

Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

Hiroshi Amano, W. W. Chow, 2001 .

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

Eugene E. Haller, Isamu Akasaki, Hiroshi Amano, 1996 .

Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

Low-Intensity Ultraviolet Photodetectors Based on AlGaN

Theeradetch Detchprohm, Motoaki Iwaya, Isamu Akasaki, 1999 .

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)†

Hiroshi Amano, 2015 .

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Kazuki Mori, Motoaki Iwaya, Satoshi Kamiyama, 2016 .

Dependence of resonance energy transfer on exciton dimensionality.

Lars Hultman, Hiroshi Amano, Jan Junis Rindermann, 2011, Physical review letters.

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, 1998 .

Novel UV devices on high-quality AlGaN using grooved underlying layer

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

Exciton lifetimes in GaN and GaInN

Isamu Akasaki, Hiroshi Amano, Bo Monemar, 1995 .

Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature

Isamu Akasaki, Hiroshi Amano, Norikatsu Koide, 1994 .

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 1995 .

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2004 .

75 Å GaN channel modulation doped field effect transistors

Lester F. Eastman, Jinwook Burm, Isamu Akasaki, 1996 .

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

Isamu Akasaki, Hiroshi Amano, Shugo Nitta, 2000 .

Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Deep level defects in n‐type GaN

Isamu Akasaki, Hiroshi Amano, N. M. Johnson, 1994 .

One‐step lateral growth for reduction in defect density of a ‐plane GaN on r ‐sapphire substrate and its application in light emitters

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .

Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices

Isamu Akasaki, Hiroshi Amano, H. Amano, 1994 .

High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2009 .

Violet and UV light‐emitting diodes grown on ZrB2 substrate

Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, 2003 .

Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2006 .

Laser lift-off of AlN/sapphire for UV light-emitting diodes

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2012 .