Yasunori Tateno

NovelInstability-Prob ing Simulation forPowerAmplifiers

Shinya Mizuno, Yasunori Tateno, 2006 .

Failure mode analysis of GaN-HEMT under high temperature operation

Hiroshi Yamamoto, Masato Furukawa, Satoshi Shimizu, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests

Hiroshi Yamamoto, Takashi Nakabayashi, Yasunori Tateno, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Investigation of the Failure Mechanism of InGaAs-pHEMT under High Temperature Operating Life Tests

Atsushi Nitta, Yoshihide Komatsu, Yasunori Tateno, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

AlGaN/GaN HEMTs versus InAlN/GaN HEMTs fabricated by150-nm Y-gate process

Hiroyuki Ichikawa, Kazutaka Inoue, Yasunori Tateno, 2014, 2014 Asia-Pacific Microwave Conference.