C.H. Lee

A novel low-voltage hot-carrier (LVHC) programming method for scaled NAND flash cell

Chih-Yuan Lu, J.S. Huang, C.H. Cheng, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Performance comparison between circular and elliptical type micro-speakers for cellular phones

G.Y. Hwang, S.M. Hwang, B.S. Kang, 2003, Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401).

A 0.6V 45nm adaptive dual-rail SRAM compiler circuit design for lower VDD_min VLSIs

Y.H. Chen, C.H. Lee, H.J. Liao, 2008, 2008 IEEE Symposium on VLSI Circuits.

A 130nm 1.1V 143MHz SRAM-like embedded DRAM COMPILER with Dual Asymmetric bit line Sensing Scheme and quiet unselected IO scheme

C.H. Lee, M.G. Kim, G.H. Kim, 2004, 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525).

Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond

Donggun Park, Kinam Kim, T.Y. Kim, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

C.C. Chen, Shien-Yang Wu, S.Y. Chang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Defect tool monitoring of process equipment by AIT fusion

C.H. Lee, L. Lin, F.M. Kuo, 2004, 2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846).

Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology

Y.S. Hwang, M.H. Cho, W.S. Yang, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).