Takashi Makimura

Bias acceleration of drain resistance increase in InP-based HEMTs and lifetime enhancement by low-bias design of ICs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

Koichi Murata, Masahiro Yamaguchi, Takatomo Enoki, 2003 .

Advanced IC fabrication technology using reliable, small-size, and high-speed AlGaAs/GaAs HBTs

Osaake Nakajima, Hiroshi Ito, Y. Yamauchi, 1991, International Electron Devices Meeting 1991 [Technical Digest].

10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs

Osaake Nakajima, Hiroshi Ito, Tadao Ishibashi, 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Toshihiko Kosugi, Naoteru Shigekawa, Hiroyasu Ishikawa, 2004 .

Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors

Tetsuya Suemitsu, Naoteru Shigekawa, Takashi Makimura, 2005 .