S. Neugebauer

Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides

M. Eickhoff, Motomu Tanaka, Wasim Abuillan, 2018 .

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

M. Lehmann, A. Strittmatter, J. Bläsing, 2017 .

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

A. Strittmatter, A. Dadgar, C. Berger, 2022, Journal of Applied Physics.

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

J. Bläsing, B. Witzigmann, A. Dadgar, 2013 .

Low-resistivity vertical current transport across AlInN/GaN interfaces

A. Strittmatter, J. Bläsing, A. Dadgar, 2020, Japanese Journal of Applied Physics.

Polarization engineering of c‐plane InGaN quantum wells by pulsed‐flow growth of AlInGaN barriers

A. Strittmatter, J. Bläsing, A. Dadgar, 2016 .

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

A. Strittmatter, J. Bläsing, A. Dadgar, 2017 .

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Georgios G. Roumeliotis, M. Lehmann, M. Kneissl, 2018, Journal of Physics D: Applied Physics.