John L. Sturtevant

发表

Contour quality assessment for OPC model calibration

Paul Filitchkin, Thuy Do, Ir Kusnadi, 2009, Advanced Lithography.

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask

Hiroyuki Shindo, Thuy Do, Ir Kusnadi, 2011, Photomask Technology.

Calibration of chemically amplified resist models

John L. Sturtevant, Jeff D. Byers, John S. Petersen, 1996, Advanced Lithography.

Optimizing gate layer OPC correction and SRAF placement for maximum design manufacturability

John L. Sturtevant, Shumay Shang, Travis Brist, 2007, SPIE Advanced Lithography.

UV pretreatments for improved etching of organic antireflective coating (ARC) layer

John L. Sturtevant, Linda J. Insalaco, Vandana N. Krishnamurthy, 1995, Advanced Lithography.

Removable organic antireflection coating

John L. Sturtevant, Linda J. Insalaco, Vandana N. Krishnamurthy, 1996, Advanced Lithography.

Experimental determination of the impact of polysilicon LER on sub-100-nm transistor performance

John L. Sturtevant, Nigel Cave, Kyle Patterson, 2001, SPIE Advanced Lithography.

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

Hiroyuki Shindo, John L. Sturtevant, Daisuke Hibino, 2012, Advanced Lithography.

Advances in Resist Technology and Processing XXI

John L. Sturtevant, 2004 .

Impact of 14-nm photomask uncertainties on computational lithography solutions

John L. Sturtevant, Edita Tejnil, Kent H. Nakagawa, 2013 .

Bayesian inference for OPC modeling

John L. Sturtevant, Bruce W. Smith, David Fryer, 2016, Advanced Lithography.

Contact-hole MEEF comparison between ALTA and 50-KeV written masks

John L. Sturtevant, James C. Word, Juliann Opitz, 2003, SPIE Advanced Lithography.

Impact of illumination on model-based SRAF placement for contact patterning

John L. Sturtevant, Aasutosh Dave, Omar El-Sewefy, 2010, Advanced Lithography.

Exposure tool specific post-OPC verification

John L. Sturtevant, Le Hong, Srividya Jayaram, 2008, SPIE Advanced Lithography.

Assessing the impact of real world manufacturing lithography variations on post-OPC CD control

John L. Sturtevant, P. LaCour, J. Word, 2005, SPIE Advanced Lithography.

Practicing extension of 248-nm DUV optical lithography using trim-mask PSM

Chong-Cheng Fu, John L. Sturtevant, Linard Karklin, 1999, Advanced Lithography.

Design for Manufacturability through Design-Process Integration VII

John L. Sturtevant, Mark E. Mason, 2013 .

Automatic assist feature placement optimization based on process-variability reduction

John L. Sturtevant, Zeki Bozkus, Srividya Jayaram, 2007, SPIE Photomask Technology.

Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm FDSOI technologies

Thuy Do, John L. Sturtevant, Yuri Granik, 2013, Advanced Lithography.

The impact of 14-nm photomask uncertainties on computational lithography solutions

John L. Sturtevant, Edita Tejnil, Kent H. Nakagawa, 2013, Advanced Lithography.

Assist feature OPC implementation for the 130 nm technology node with KrF and no forbidden pitches

John L. Sturtevant, James C. Word, Siuhua Zhu, 2002, SPIE Advanced Lithography.

Edge placement errors in EUV from aberration variation

John L. Sturtevant, Germain Fenger, Ananthan Raghunathan, 2017, Photomask Technology.

Further improvements in CGR formulation and process

Will Conley, William R. Brunsvold, John L. Sturtevant, 1994, Advanced Lithography.

Contour-based self-aligning calibration of OPC models

Thuy Do, Ir Kusnadi, John L. Sturtevant, 2010, Advanced Lithography.

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

John L. Sturtevant, Edita Tejnil, Kent H. Nakagawa, 2013, Photomask Technology.

Toward full-chip prediction of yield-limiting contact patterning failure: correlation of simulated image parameters to advanced contact metrology metrics

John L. Sturtevant, Dyiann Chou, 2006, SPIE Advanced Lithography.

Bayesian Analysis for Photolithographers

John L. Sturtevant, Bruce W. Smith, David Fryer, 2016 .

Characterization of CD control for sub-0.18-μm lithographic patterning

Chong-Cheng Fu, John L. Sturtevant, Kevin D. Lucas, 1999, Advanced Lithography.

Toward 0.1-μm contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization

John L. Sturtevant, Ralph R. Dammel, Andrew R. Romano, 2001, SPIE Advanced Lithography.

Photosensitization in dyed and undyed APEX-E DUV resist

Will Conley, John L. Sturtevant, Stephen E. Webber, 1996, Advanced Lithography.

CD error budget analysis for 0.18-μm inlaid trench lithography

Chong-Cheng Fu, John L. Sturtevant, Kevin D. Lucas, 1999, Advanced Lithography.

Theoretical and experimental optimization of numerical aperture and partial coherence for complementary phase-shift processes

John L. Sturtevant, Nigel Cave, Carla Nelson-Thomas, 2001, SPIE Advanced Lithography.

Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk

John L. Sturtevant, Michael Lam, David Fryer, 2014, Advanced Lithography.

Circuit-based SEM contour OPC model calibration

Ir Kusnadi, John L. Sturtevant, Kyle Patterson, 2007, SPIE Advanced Lithography.

Bayesian analysis for OPC modeling with film stack properties and posterior predictive checking

John L. Sturtevant, Germain Fenger, David Fryer, 2016, European Mask and Lithography Conference.

Interlayer verification methodology for multi-patterning processes

John L. Sturtevant, Sunwook Jung, Sejin Park, 2017, Advanced Lithography.

Reduction of reflective notching through illumination optimization

John L. Sturtevant, James C. Word, Yiming Gu, 2002, SPIE Advanced Lithography.

Multi-layer VEB modeling: capturing interlayer etch process effects for multi-patterning process

John L. Sturtevant, Young Ki Kim, Sunwook Jung, 2016, Advanced Lithography.

Towards the prediction of pattern collapse hotspots for full-chip layouts

John L. Sturtevant, Aasutosh Dave, Uwe Hollerbach, 2011, Photomask Technology.

A 180 nm copper/low-k CMOS technology with dual gate oxide optimized for low power and low cost consumer wireless applications

John L. Sturtevant, D. Menke, C. Lage, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Hiroyuki Shindo, Thuy Do, Ir Kusnadi, 2010, Advanced Lithography.

Full-chip correction of implant layer accounting for underlying topography

John L. Sturtevant, Aasutosh Dave, Yuri Granik, 2012, Advanced Lithography.

Characterization of optical proximity correction features

John L. Sturtevant, Kevin D. Lucas, John Miller, 2001, SPIE Advanced Lithography.

Roadmap to sub-nanometer OPC model accuracy

John L. Sturtevant, Edita Tejnil, 2012, Other Conferences.

High-precision contouring from SEM image in 32-nm lithography and beyond

Hiroyuki Shindo, Thuy Do, Ir Kusnadi, 2009, Advanced Lithography.

SEM-contour-based OPC model calibration through the process window

John L. Sturtevant, Jim Vasek, Ofer Lindman, 2007, SPIE Advanced Lithography.

Finding practical phenomenological models that include both photoresist behavior and etch process effects

John L. Sturtevant, Sunwook Jung, Thuy Do, 2015, Advanced Lithography.

Design for Manufacturing and Design Process Technology Co-Optimization

John L. Sturtevant, Luigi Capodieci, 2020 .

Reduction of implantation shadowing effect by dual-wavelength exposure photo process

John L. Sturtevant, William R. Roche, Yiming Gu, 2003, SPIE Advanced Lithography.

Full-field CD control for sub-0.20-μm patterning

Chong-Cheng Fu, John L. Sturtevant, Robert R. Hershey, 1997, Advanced Lithography.

The evolution of patterning process models in computational lithography

John L. Sturtevant, 2010, Advanced Lithography.

Implementation of a closed-loop CD and overlay controller for sub-0.25-μm patterning

John L. Sturtevant, Robert R. Hershey, Kent G. Green, 1998, Advanced Lithography.

Process window-based feature and die failure rate prediction

John L. Sturtevant, Shumay Shang, Andrew Burbine, 2019, Advanced Lithography.

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

John L. Sturtevant, Steven J. Holmes, Paul A. Rabidoux, 1992, Advanced Lithography.

Effective use of aerial image metrology for calibration of OPC models

John L. Sturtevant, Ute Buttgereit, Ao Chen, 2017, Advanced Lithography.

Characterization and reduction of highly localized substrate contamination defects in metal patterning

John L. Sturtevant, Yiming Gu, Anqing Zhang, 2002, SPIE Advanced Lithography.

Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules

John L. Sturtevant, John S. Petersen, Nathan S. Thane, 1995, Advanced Lithography.

Model Based Multilayers Fix for Litho Hotspots beyond 20nm node

John L. Sturtevant, Luigi Capodieci, Asmaa Rabie aa, 2014 .

Design of a bottom antireflective layer for optical lithography

John L. Sturtevant, Wayne M. Moreau, James Thomas Fahey, 1994, Advanced Lithography.

Single wafer process to generate reliable swing

John L. Sturtevant, Cynthia Zhu, Yiming Gu, 2003, SPIE Advanced Lithography.

Manufacturing implementation of deep-UV lithography for 500-nm devices

John L. Sturtevant, Karey L. Holland, Steven J. Holmes, 1992, Advanced Lithography.

New methodology to predict pattern collapse for 14nm and beyond

John L. Sturtevant, Aasutosh Dave, Kenji Yoshimoto, 2012, Advanced Lithography.

Resist compacting under SEM E-Beam

John L. Sturtevant, Yiming Gu, Dyiann Chou, 2003, SPIE Advanced Lithography.

High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

Hiroyuki Shindo, Ir Kusnadi, John L. Sturtevant, 2011 .

Impact of illumination source symmetrization in OPC

John L. Sturtevant, Martin McCallum, Stephen P. Renwick, 2008, Photomask Japan.

Improving overly manufacturing metrics through application of feedforward mask-bias

John L. Sturtevant, Joseph Pellegrini, Etienne Joubert, 2003, SPIE Advanced Lithography.

Development of an i-line attenuated phase shift process for dual inlay interconnect lithography

John L. Sturtevant, Charles Fredrick King, Lloyd C. Litt, 2000, Advanced Lithography.

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-Contours from wafer and mask

Hiroyuki Shindo, Ir Kusnadi, John L. Sturtevant, 2011, Advanced Lithography.

Novel method for optimizing lithography exposure conditions using full-chip post-OPC simulation

John L. Sturtevant, Le Hong, Srividya Jayaram, 2008, SPIE Advanced Lithography.

Design-Process-Technology Co-optimization for Manufacturability VIII

John L. Sturtevant, 2014 .

14-nm photomask simulation sensitivity

John L. Sturtevant, Edita Tejnil, Kent H. Nakagawa, 2014, European Mask and Lithography Conference.

Negative DUV photoresist for 16Mb-DRAM production and future generations

Will Conley, William R. Brunsvold, John L. Sturtevant, 1993, Advanced Lithography.

Modeling metrology for calibration of OPC models

John L. Sturtevant, Yunfei Deng, Chris A. Mack, 2016, SPIE Advanced Lithography.

Akaike information criterion to select well-fit resist models

John L. Sturtevant, David Fryer, Andrew Burbine, 2015, Advanced Lithography.

Two-layer critical dimensions and overlay process window characterization and improvement in full-chip computational lithography

John L. Sturtevant, Rachit Gupta, Vlad Liubich, 2016 .

Postexposure bake as a process-control parameter for chemically amplified photoresist

Steven J. Holmes, John L. Sturtevant, Philip C. D. Hobbs, 1993, Advanced Lithography.

Process variability band analysis for quantitative optimization of exposure conditions

John L. Sturtevant, Le Hong, Srividya Jayaram, 2009, Advanced Lithography.

Challenges for patterning process models applied to large scale

John L. Sturtevant, 2012 .

SURVEY OF PROCESSING AFFECTS ON SUBSTRATE COMPATIBILITY OF CHEMICALLY AMPLIFIED RESISTS

James W. Thackeray, John L. Sturtevant, Ronald A. Carpio, 1995 .