A M Vasson

发表

The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers

J. Leymarie, A. Vasson, R. Grey, 1998 .

Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties

J. Leymarie, C. Monier, P. Disseix, 1997 .

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

J. Massies, N. Grandjean, J. Leymarie, 1997 .

Photoluminescence study of the Be acceptor at the centre of quantum wells with sizes in the range 28 - 300 Å

J. M. Chamberlain, J. Leymarie, A. Vasson, 1996 .

Epitaxial growth and kinetic study of mismatched (Ga,In) As/InP layers grown by hydride vapour phase epitaxy

A. Vasson, S. Clark, E. Gil, 1994 .

Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE

J. Leymarie, B. Gruzza, D. Castelluci, 1999 .

Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy

J. Massies, N. Grandjean, J. Leymarie, 1997 .