J.C. Hu

Experimental evidence for voltage driven breakdown models in ultrathin gate oxides

W. R. Hunter, P. E. Nicollian, W. Hunter, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

G.A. Brown, J. D. Luttmer, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation

D. T. Grider, W. Hunter, M. Rodder, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

A. Chatterjee, M. Rodder, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

M. Liang, J.L. Yang, H. Lo, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

A 1.2V, sub-0.09 /spl mu/m gate length CMOS technology

S. Aur, M. Rodder, M. Mehrotra, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).