V. Raineri

Evolution of void layers induced by multiple He implants

E. Rimini, M. Saggio, V. Raineri, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

The role of extended defects on transient boron diffusion in ion-implanted silicon

J. R. Liefting, K. Janssen, V. Raineri, 1992 .

Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

J. Jun, J. Ratajczak, J. Kątcki, 2002 .

The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions

I. Fragalà, C. Bongiorno, C. Spinella, 2003 .