K. Fujita

Low dislocation density Si-doped GaAs single crystal grown by the vapor-pressure-controlled Czochralski method

M. Tatsumi, S. Akai, K. Hashio, 1997 .

Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs

M. Sasaki, S. Nishine, Kazuhisa Matsumoto, 1984 .

Slip defect generation on GaAs wafers during high temperature process: a thermoelastic study from a crystallographic viewpoint

M. Kiyama, T. Takebe, S. Sawada, 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

Physicochemical effects of seed structure and composition on optimized TSV fill performance

K. Fujita, D. Papapanayiotou, J. Chen, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).