A. S. Sokhatskii

Effect of the ionization energy loss density of high-energy bismuth, krypton, and xenon ions on the development of hydrogen blisters in silicon

A. Kobzev, A. Zaluzhnyi, V. F. Reutov, 2009 .

Formation of ordered helium pores in amorphous silicon subjected to low-energy helium ion irradiation

V. F. Reutov, A. S. Sokhatskii, 2003 .

Experimental measurements of ranges of swift heavy ions in single crystals by “cross-section” technique

A. Didyk, O. Orelovich, A. S. Sokhatskii, 2011 .

Helium ion bombardment induced amorphization of silicon crystals

V. F. Reutov, A. S. Sokhatskii, 2002 .