M. Asif Khan

发表

New technique for nonlinear control of aircraft

Ping Lu, M. Asif Khan, P. Lu, 1994 .

Reliability of AlGaN-based deep UV LEDs on sapphire

Zheng Gong, M. Asif Khan, Wenhong Sun, 2006, SPIE OPTO.

Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

Amir Dabiran, Ashok K. Sood, Yash R. Puri, 2007, SPIE OPTO.

INFLUENCE OF SOCIO-ECONOMIC ASPECTS OF FARMERS ON THEIR ACQUAINTANCE WITH NOV ARITS COMPANY

M. Asif Khan, Sher Muhammad, Ijaz Ashraf, 2002 .

Gallium nitride opens the way to visible-blind UV detectors

M. Asif Khan, Michael S. Shur, 1999 .

Generation-recombination noise in GaN and GaN-based devices

Michael S. Shur, Remis Gaska, Michael E. Levinshtein, 2003, SPIE International Symposium on Fluctuations and Noise.

Deep-ultraviolet LEDs fabricated in AlInGaN using MEMOCVD

M. Asif Khan, 2004, SPIE Optics + Photonics.

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Michael S. Shur, Christian Kisielowski, M. Asif Khan, 1997 .

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

GaN based heterostructure for high power devices

Michael S. Shur, Lester F. Eastman, Jinwook Burm, 1997 .

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, M. Khan, 1991 .

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Grigory Simin, Phil Won Yu, M. Asif Khan, 2003 .

Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

M. Asif Khan, Vinod Adivarahan, M. Khan, 2004 .

Visible-blind ultraviolet photodetectors based on GaN p-n junctions

M. Asif Khan, M. Khan, J. Yang, 1995 .

Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire

M. Asif Khan, Vinod Adivarahan, Mikhail Gaevski, 2004 .

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, M. Khan, 1992 .

Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Michael S. Shur, Grigory Simin, M. Asif Khan, 2000 .

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Grigory Simin, M. Asif Khan, Max Shatalov, 2002 .

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Jamil A. Khan, M. Asif Khan, Max Shatalov, 2005 .

Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors

Tangali S. Sudarshan, M. Asif Khan, G. Gradinaru, 1998 .

Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm

Grigory Simin, Gintautas Tamulaitis, Michael Shur, 2003 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, D. T. Olson, M. Khan, 1993 .

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

M. Asif Khan, Vinod Adivarahan, Remigijus Gaska, 2004 .

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

C. Q. Chen, Richard J. Molnar, M. Asif Khan, 2004 .

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Grigory Simin, M. Asif Khan, Vinod Adivarahan, 2002 .

Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes

M. Asif Khan, Max Shatalov, Michael J. Uren, 2002 .

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2001 .

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1993 .

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

M. Asif Khan, M. Khan, P. Pirouz, 1996 .

High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, M. Khan, 1991 .

Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition

R. M. Kolbas, M. Asif Khan, D. T. Olson, 1991 .

Schottky barrier photodetector based on Mg‐doped p‐type GaN films

M. Asif Khan, D. T. Olson, M. Khan, 1993 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2000 .

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

R. Mickevicius, Grigory Simin, Michael Shur, 2004 .

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

Thomas N. Jackson, M. Asif Khan, Suzanne E. Mohney, 1997 .

Metastability and persistent photoconductivity in Mg‐doped p‐type GaN

M. Asif Khan, Jingyu Lin, M. Khan, 1996 .

Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

Michael S. Shur, Nezih Pala, M. Asif Khan, 2000 .

Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

M. Asif Khan, J. Carter, M. Khan, 1992 .

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

Michael S. Shur, Grigory Simin, M. Asif Khan, 2003 .

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

Michael S. Shur, M. Asif Khan, M. Shur, 1996 .

250nmAlGaN light-emitting diodes

M. Asif Khan, Max Shatalov, Vinod Adivarahan, 2004 .

High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

Michael S. Shur, Rakesh K. Jain, M. Asif Khan, 2004 .

Violet‐blue GaN homojunction light emitting diodes with rapid thermal annealed p‐type layers

M. Asif Khan, M. Khan, Qin-Sheng Chen, 1995 .

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, D. T. Olson, M. Khan, 1992 .

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Michael S. Shur, Grigory Simin, Remis Gaska, 2001 .

III–Nitride UV Devices

M. Asif Khan, Edmundas Kuokstis, Hong Wang, 2005 .

P/He ion implant isolation technology for AlGaN/GaN HFETs

P. M. Asbeck, M. Asif Khan, G. Hanington, 1998 .

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

Martin Kuball, M. Asif Khan, Andrei Sarua, 2002 .

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Michael S. Shur, A. Lunev, Grigory Simin, 2000 .

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Hong Wang, Grigory Simin, C. Q. Chen, 2002 .

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .

Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

M. Asif Khan, Vinod Adivarahan, S. Wu, 2003 .

AlGaN Deep-Ultraviolet Light-Emitting Diodes

Michael S. Shur, A. Lunev, Remis Gaska, 2005 .

Time-resolved photoluminescence studies of InGaN epilayers

Guangde Chen, M. Asif Khan, Hongxing Jiang, 1996 .

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

Michael S. Shur, Andrei Osinsky, Gregory L. Snider, 1998 .

Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

M. Asif Khan, Vinod Adivarahan, Edmundas Kuokstis, 2004 .

Carrier mobility model for GaN

Michael E. Levinshtein, Grigory Simin, S. N. Yurkov, 2003 .

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

M. Asif Khan, M. Khan, Q. Fareed, 2002 .

High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

A. Lunev, Grigory Simin, Michael Shur, 2000 .

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

M. Asif Khan, Saulius Jursenas, A. Žukauskas, 2004 .

High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

M. Asif Khan, D. T. Olson, M. Khan, 1993 .

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

M. Asif Khan, W. J. Choyke, D. T. Olson, 1992 .

Micro-pixel Design Milliwatt Power 254 nm Emission Light Emitting Diodes

M. Asif Khan, Vinod Adivarahan, Wenhong Sun, 2004 .

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Michael S. Shur, David J. Smith, Grigory Simin, 2000 .

AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise

Ilesanmi Adesida, M. Asif Khan, M. Khan, 2001 .

Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

Zheng Gong, M. Asif Khan, Mikhail Gaevski, 2004 .

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

A. Lunev, Grigory Simin, Remis Gaska, 2000 .

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, A. Tarakji, Grigory Simin, 2000 .

Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

Thomas George, M. Asif Khan, D. T. Olson, 1994 .

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Michael S. Shur, Grigory Simin, M. Asif Khan, 2002 .

High responsitivity intrinsic photoconductors based on AlxGa1−xN

M. Asif Khan, M. Khan, Qin-Sheng Chen, 1996 .

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

Michael S. Shur, William J. Schaff, M. Asif Khan, 1995 .

Simulation of gate lag and current collapse in gallium nitride field-effect transistors

Michael S. Shur, R. Mickevicius, Grigory Simin, 2004 .

Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Michael S. Shur, Michael E. Levinshtein, Grigory Simin, 2000 .

Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, M. Khan, 1991 .

Metal contacts to n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1998 .

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes

Li Yan, M. Asif Khan, Vinod Adivarahan, 2006 .

High DC power 325 nm emission deep UV LEDs over sapphire [AlGaN]

M. Asif Khan, Max Shatalov, Vinod Adivarahan, 2002 .

Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

Zheng Gong, M. Asif Khan, Max Shatalov, 2006 .

High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Millimeter wave emission from GaN high electron mobility transistor

Michael S. Shur, Xiang Zhang, Jingzhou Xu, 2004 .

Surface emission of InxGa1−xN epilayers under strong optical excitation

M. Asif Khan, Hongxing Jiang, J. W. Yang, 1997 .

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

Michael S. Shur, Gintautas Tamulaitis, M. Asif Khan, 2002 .

AlGaN layers grown on GaN using strain-relief interlayers

Hong Wang, C. Q. Chen, M. Asif Khan, 2002 .

High temperature characteristics of Pd Schottky contacts on n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1996 .