X. Zou

Xiao Zou, Hongjiu Wang, Yao Li, 2013, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer

G. Fang, H. Long, Haoning Wang, 2013 .

Enhanced performance of a-IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contacts

Xingzhong Zhao, G. Fang, Jiawei Wan, 2011 .

Improved electrical characteristics and reliability of amorphous InGaZnO metal-insulator-semiconductor capacitor with high kappa HfOxNy gate dielectric

Xiao Zou, Guojia Fang, Longyan Yuan, 2010, Microelectron. Reliab..

A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

Xingzhong Zhao, G. Fang, Longyan Yuan, 2010 .

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With $\hbox{HfO}_{x}\hbox{N}_{y}/\hbox{HfO}_{2}/\hbox{HfO}_{x}\hbox{N}_{y}$ Tristack Gate Dielectrics

Hai Zhou, Xingzhong Zhao, Guojia Fang, 2011, IEEE Electron Device Letters.

Improved subthreshold swing and gate bias stressing stability of a-IGZO thin-film transistors with HfON/HfO2/HfON tri-stack dielectrics

Longyan Yuan, Xingsheng Tong, X. Zou, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO2 stack gate dielectric

P. Lai, J. Xu, Xiao Zou, 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With {HfO}_{x}{N}_{y}/{HfO}_{2}/{HfO}_{x}{N}_{y} Tristack Gate Dielectrics

Xingzhong Zhao, G. Fang, Longyan Yuan, 2011 .

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm.

Wing-Man Tang, Lu Liu, Hongjiu Wang, 2020, ACS applied materials & interfaces.

Study on electrical characteristics of amorphous InGaZnO MOS capacitors with High κ HfOxNy gate dielectric

Xingsheng Tong, X. Zou, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Study on Electrical Characteristics ofAmorphous InGaZnO MOS Capacitors with High K HfOxN y Gate

Xingsheng Tong, X. Zou, 2009 .

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Changcun Li, P. Lai, C. Chan, 2009 .

Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric

P. Lai, Jingping Xu, X. Zou, 2008, 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems.

Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-CuxO and HfO2/SiO2 high-κ stack gate dielectrics

Xingzhong Zhao, G. Fang, Longyan Yuan, 2010 .

Electrical properties of polycrystalline p-CuxO MOS capacitors with SiO2/HfO2 high κ stack gate dielectric on silicon substrate

G. Fang, Longyan Yuan, Nishuang Liu, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

Study on electrical properties of HfTiON and HfTiO gate dielectric Ge MOS capacitors with wet-NO surface pretreatment

Jingping Xu, X. Zou, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

MoS2 transistors gated by ferroelectric HfZrO2 with MoS2/mica heterojunction interface

Lu Liu, Hongjiu Wang, Jingping Xu, 2021, Nanotechnology.