A. Misiuk

发表

Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

J. Jun, J. Ratajczak, J. Kątcki, 2002 .

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

A. Cherkov, W. Skorupa, K. Zhuravlev, 2003 .

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

E. P. Neustroev, A. Romano-Rodríguez, I. Antonova, 2001 .

Formation of oxygen precipitates in silicon

V. Popov, I. Antonova, A. Misiuk, 1997 .

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

A. Romano-Rodríguez, B. Surma, I. Tyschenko, 1999 .

Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon

A. Ulyashin, I. Tyschenko, A. Misiuk, 2012 .

Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen

L. N. Safronov, I. Tyschenko, V. Popov, 2002 .