Kenji Shiraishi

发表

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot

Tetsuo Endoh, Masakazu Muraguchi, Yukihiro Takada, 2009, IEICE transactions on electronics.

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory

Yasuteru Shigeta, Katsumasa Kamiya, Kenji Shiraishi, 2011, IEICE Trans. Electron..

Theoretical and Experimental Approaches to Select Resistive Switching Material

Shinichi Yoneda, Zhiqiang Wei, Kenji Shiraishi, 2015, IEICE Trans. Electron..

Market based embedded Real Time Operation for Distributed Resources and Flexibility pdf

Bertrand Travacca, Kenji Shiraishi, Greg Rybka, 2018, ArXiv.

Examination of short calibration problem of Transmission Line Pulse

Kenji Shiraishi, Teruo Suzuki, K. Shiraishi, 2013, IEICE Electron. Express.

A massively-parallel electronic-structure calculations based on real-space density functional theory

Taisuke Boku, Daisuke Takahashi, Kazuhiro Yabana, 2010, J. Comput. Phys..

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

Tetsuo Endoh, Seiichi Miyazaki, Mitsuhisa Ikeda, 2010, IEICE transactions on electronics.

ナノメートルサイズ半導体微結晶研究WG 活動報告 (2)

Yoshihiko Kanemitsu, Shinichi Yoda, 白石賢二, 2006 .

Atomistic study of SiN based ReRAM with high program/erase cycle endurance

Kenji Shiraishi, Keita Yamaguchi, Hiroki Shirakawa, 2018, IEICE Electron. Express.

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films

Tetsuo Endoh, Kenji Shiraishi, Kazuyuki Hirose, 2007, IEICE Trans. Electron..

Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2)

Kenji Shiraishi, Keita Yamaguchi, Akira Otake, 2010, SDM 2010.

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

Katsumasa Kamiya, Kenji Shiraishi, Keita Yamaguchi, 2017, IEICE Trans. Electron..

Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices

Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, 2014 .

Si nanowire FET and its modeling

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Science China Information Sciences.

Momentum-matrix-element calculation using pseudopotentials

Kenji Shiraishi, K. Shiraishi, Hiroyuki Kageshima, 1997 .

First-principles calculations of boron-related defects in SiO 2

Atsushi Oshiyama, Kenji Shiraishi, Minoru Otani, 2003 .

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Kikuo Yamabe, Kazuyoshi Torii, Kenji Shiraishi, 2005 .

First-principles calculations of boron-related defects in SiO2

Atsushi Oshiyama, Kenji Shiraishi, Minoru Otani, 2003 .

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Masaaki Niwa, Yoshio Nishi, Katsumasa Kamiya, 2013 .

Origin of high solubility of silicon in La2O3: A first-principles study

Kenji Shiraishi, Naoto Umezawa, 2010 .

Atomistic origin of high-quality novel SiON gate dielectrics

Kenji Shiraishi, Akira Otake, Keita Yamaguchi, 2009 .

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

Masaaki Niwa, Yoshio Nishi, Katsumasa Kamiya, 2012 .

First-Principles Study of Oxide Growth on Si(100) Surfaces and at SiO 2 /Si(100) Interfaces

Kenji Shiraishi, K. Shiraishi, Hiroyuki Kageshima, 1998 .

Size-dependent properties of ballistic silicon nanowire field effect transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Light absorption efficiencies of photosynthetic pigments: the dependence on spectral types of central stars

Masayuki Umemura, Kenji Shiraishi, Megumi Kayanuma, 2014, International Journal of Astrobiology.

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2001 .

Ga adatom diffusion on an As‐stabilized GaAs(001) surface via missing As dimer rows: First‐principles calculation

Kenji Shiraishi, K. Shiraishi, 1992 .

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

Katsumasa Kamiya, Kenji Shiraishi, Makoto Kasu, 2011 .

A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth

Kenji Shiraishi, K. Shiraishi, T. Ito, 1996 .

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2004 .

Electronic Structures of Protein Nanotubes

Kenji Shiraishi, Katsuhiko Fukasaku, Kyozaburo Takeda, 1997 .

Fabrication of single-electron transistors and circuits using SOIs

Yasuo Takahashi, Kenji Yamazaki, Kenji Shiraishi, 2002 .

A new theoretical approach to adsorption desorption behavior of Ga on GaAs surfaces

Kenji Shiraishi, Akihito Taguchi, Yoshihiro Kangawa, 2001 .

Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach

Kazuyoshi Torii, Kiyomi Nakajima, Kenji Shiraishi, 2004 .

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Kikuo Yamabe, Yasuo Nara, Kenji Shiraishi, 2006 .

First-principles calculations of surface adsorption and migration on GaAs surfaces

Kenji Shiraishi, K. Shiraishi, 1996 .

Theoretical approach to influence of As2 pressure on GaAs growth kinetics

Kenji Shiraishi, Akihito Taguchi, Yoshihiro Kangawa, 2002 .

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Hiroshi Iwai, Kuniyuki Kakushima, Y. Nara, 2007 .

Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Kenji Shiraishi, Norikazu Hosokawa, Yoshiyuki Hisada, 2013 .

Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxides

Tsuyoshi Uda, Takenori Yamamoto, Kenji Shiraishi, 2006 .

First-principles study of the electronic and molecular structure of protein nanotubes

Kenji Shiraishi, Hajime Okamoto, Kyozaburo Takeda, 2001 .