V. Shvets

发表

Determination of the thickness and optical constants of nanofilms produced by the thermal oxidation of InP with V2O5, V2O5 + PbO, and NiO + PbO chemical stimulator layers grown by magnetron sputtering

V. A. Shvets, I. Mittova, E. Tomina, 2013, Inorganic Materials.

Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition

V. G. Remesnik, D. Marin, I. Azarov, 2020, Optics and Spectroscopy.

Electronic structure and charge transport properties of amorphous Ta2O5 films

Hei Wong, V. V. Atuchin, V. A. Shvets, 2008 .

Growth of HgTe Quantum Wells for IR to THz Detectors

Yu. G. Sidorov, V. A. Shvets, S. Ganichev, 2010 .

The growth of high-quality MCT films by MBE using in-situ ellipsometry

V. G. Remesnik, S. Dvoretsky, K. K. Svitashev, 1994 .

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

V. G. Remesnik, Yu. G. Sidorov, V. A. Shvets, 2019, Opto-Electronics Review.

Ellipsometric analysis of inhomogeneous structures on the basis of complex reflection coefficients

A. S. Mardezhov, V. Shvets, R. I. Lubinskaya, 1986 .

Atomic and electronic structures of lutetium oxide Lu2O3

V. A. Shvets, V. Kaichev, V. Gritsenko, 2013 .

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

V. G. Remesnik, Yu. G. Sidorov, V. A. Shvets, 2020, Optoelectronics, Instrumentation and Data Processing.

The Growth of CdTe Layer on GaAs Substrate by MBE

V. A. Kartashev, Yu. G. Sidorov, I. Sabinina, 2019, Methods for Film Synthesis and Coating Procedures.

Use of ellipsometric measurements for high-sensitivity monitoring of surface temperature

M. Yakushev, V. Shvets, 1999 .

Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO2/Si(100) nanostructures during growth

V. A. Shvets, S. Ovchinnikov, O. Tereshchenko, 2012 .

Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films

E. B. Gorokhov, A. Borisov, V. Volodin, 2005 .

Accuracy of ellipsometric monitoring during growth of semiconductor nanostructures

V. Shvets, 2009 .

In situ ellipsometry for control of Hg1−xCdxTe nanolayer structures and inhomogeneous layers during MBE growth

Yu. G. Sidorov, S. V. Rykhlitski, R. N. Smirnov, 2004 .

Molecular Beam Epitaxy of Cd x Hg 1−x Te

V. G. Remesnik, Yu. G. Sidorov, V. A. Shvets, 2017 .

Dispersion of the refractive index in high-k dielectrics

V. Gritsenko, V. Kruchinin, V. Shvets, 2017 .

A method for measuring the phase of the reflection coefficient in the visible range of the spectrum

V. Shvets, 2017 .

Determining the Compositional Profile of HgTe/CdxHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry

S. Dvoretskii, N. Mikhailov, D. Ikusov, 2019, Optics and Spectroscopy.

CdHgTe-based nanostructures for photodetectors

V. A. Shvets, B. Wittmann, S. Ganichev, 2009 .

HgCdTe quantum wells grown by molecular beam epitaxy

V. G. Remesnik, Yu. G. Sidorov, V. A. Shvets, 2008 .

Growing HgTe/Cd0.735Hg0.265Te quantum wells by molecular beam epitaxy

Yu. G. Sidorov, V. A. Shvets, R. N. Smirnov, 2007 .

Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control

Yu. G. Sidorov, V. A. Shvets, S. V. Rykhlitski, 2006 .

Uniformity of Optical Constants in Amorphous Ta2O5 Thin Films as Measured by Spectroscopic Ellipsometry

V. Aliev, S. Chikichev, S. V. Rykhlitskiĭ, 2004 .

Atomic and electronic structures of lutetium oxide Lu2O3

V. Gritsenko, V. Kaichev, T. Perevalov, 2013, Journal of Experimental and Theoretical Physics.

Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers

D. Marin, I. Azarov, S. V. Rykhlitskiĭ, 2021, Optoelectronics, Instrumentation and Data Processing.

Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy

M. Yakushev, D. Marin, S. V. Rykhlitskiĭ, 2021 .

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

M. Yakushev, D. Marin, I. Azarov, 2019, Semiconductors.

Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers

I. Azarov, A. Toropov, S. V. Rykhlitskiĭ, 2019, Optoelectronics, Instrumentation and Data Processing.

Dynamics of Growth of the Native Oxide of CdxHg1−xTe

Yu. G. Sidorov, G. Sidorov, V. Varavin, 2017 .

High-speed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures

V. A. Shvets, I. Mittova, E. Tomina, 2013, Inorganic Materials.

Analysis of a static scheme of ellipsometric measurements

E. Spesivtsev, V. Shvets, S. V. Rykhlitskii, 2004 .

Ellipsometric in situ diagnostics of the growth of porous anodic oxide films on aluminum

V. Kruchinin, N. Uvarov, S. V. Rykhlitskiĭ, 2015 .

Ellipsometry as a high-precision technique for subnanometer-resolved monitoring of thin-film structures

E. Spesivtsev, N. Mikhailov, S. V. Rykhlitskiĭ, 2009 .

A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

Yu. G. Sidorov, V. A. Shvets, D. N. Pridachin, 1999 .