S. Takasu

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

D. Okamoto, K. Fukuda, T. Hatakeyama, 2015 .

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

M. Sometani, S. Harada, J. Senzaki, 2016 .

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

D. Okamoto, K. Fukuda, T. Hatakeyama, 2015 .

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Kenji Fukuda, Hajime Okumura, Manabu Takei, 2014 .

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Kenji Fukuda, Manabu Arai, Hiroyuki Fujisawa, 2013 .

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).