M. Kobayashi

MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

N. Ōtsuka, R. Gunshor, J. Ding, 1993 .

Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers

Masahiro Kobayashi, T. Uchida, T. Yamamoto, 1997 .

Schottky Barrier Diode Characteristics of Graphene‐GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

M. Tanemura, G. Kalita, Mai Kobayashi, 2018, physica status solidi (a).

Fabrication of densely distributed Si nanorods by Ar+-ion bombardment

L. Miao, S. Tanemura, M. Tanemura, 2006 .