D. Han

发表

Titanium oxynitride films for a bipolar plate of polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted reactive sputtering

J. J. Lee, Jungmin Kim, Dong-Hun Han, 2009 .

Microwave absorbing properties of sintered Ni-Zn ferrite

Sung‐Soo Kim, Dae-Hee Han, Sung-Baeg Cho, 1994 .

Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation

Shun'ichiro Ohmi, Dae-Hee Han, S. Ohmi, 2013, IEICE Trans. Electron..

Paper Transistors with Organic Ferroelectric P(VDF-TrFE) Thin Films Using a Solution Processing Method

Byung-Eun Park, D. Han, 2020 .

Electrical Properties of Double Organic Films for FRAM

K. Kim, Byung-Eun Park, S. Jeong, 2010 .

Fabrication and characterization of organic field effect transistors with poly(3-hexylthiophene) thin films

Byung-Eun Park, S. Jeong, Dae-Hee Han, 2010 .

Nonvolatile Ferroelectric Memory Transistors Using PVDF, P(VDF-TrFE) and Blended PVDF/P(VDF-TrFE) Thin Films

Byung-Eun Park, D. Han, 2020 .

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

Tadahiro Ohmi, Shun'ichiro Ohmi, Dae-Hee Han, 2014, IEICE Trans. Electron..

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

Shun'ichiro Ohmi, Dae-Hee Han, Huiseong Han, 2013, IEICE Electron. Express.

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

S. Ohmi, N. Atthi, D. Han, 2014 .

Fabrication of a Paper Memory Transistor by Using a Solution Process

Byung-Eun Park, Gwang-Geun Lee, M. Kim, 2020, Journal of the Korean Physical Society.