J. Clemens

Two‐Phase Stepped Oxide CCD Shift Register Using Undercut Isolation

J. T. Clemens, C. N. Berglund, E. H. Nicollian, 1972 .

Intrinsic and stress-induced traps in the direct tunneling current of 2.3-3.8 nm oxides and unified characterization methodologies of sub-3 nm oxides

G. Alers, H. Vaidya, C. Liu, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Effects of Silicon Nitride Encapsulation on MOS Device Stability

J. T. Nelson, R. C. Sun, J. Clemens, 1980, IEEE International Reliability Physics Symposium.

Charging damage in thin gate-oxides-better or worse?

J. T. Clemens, H. Vaidya, C. Liu, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

Characterization of the electron mobility in the inverted <100> Si surface

J. T. Clemens, A. Sabnis, J. Clemens, 1979, 1979 International Electron Devices Meeting.

Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper

Tanya E. Jewell, Victor Pol, Martin Feldman, 1986, Advanced Lithography.

Gate-oxide degradation from source/drain (S/D) boron diffusion

H. Vaidya, C. Liu, W. Lai, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Silicon microelectronics technology

James T. Clemens, J. Clemens, 1997, Bell Labs Technical Journal.

Aluminum oxide/silicon dioxide, double–insulator, MOS structure

J. T. Clemens, C. N. Berglund, E. F. Labuda, 1975, The Bell System Technical Journal.