Dominique Castelluci

发表

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Direct condensation modelling for a two-particle growth system: Application to GaAs grown by hydride vapour phase epitaxy

A. Pimpinelli, A. Trassoudaine, J. Napierala, 2003 .

Selective growth of GaAs by HVPE: Keys for accurate control of the growth morphologies

B. Gérard, R. Cadoret, J. Napierala, 2001 .

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

R. Cadoret, Yamina André, Agnès Trassoudaine, 2007 .

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

H. Amano, S. Bae, E. Gil, 2018 .

A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)

E. Gil, Y. André, A. Trassoudaine, 2009 .

Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy

O. Parillaud, A. Trassoudaine, R. Cadoret, 1998 .

Low-cost high-quality GaN by one-step growth

E. Gil, Y. André, A. Trassoudaine, 2008 .