Tae-Kyun Kim

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Seokwoo Choi, T. Hwang, Kyungjun Cho, 2022, 2022 IEEE International Solid- State Circuits Conference (ISSCC).

A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Seokwoo Choi, Jihwan Park, Kyungjun Cho, 2023, IEEE Journal of Solid-State Circuits.