H. B. Yao

Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects

Cher Ming Tan, C. M. Fu, S. H. Wu, 2010, Microelectron. Reliab..

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology

H. B. Yao, G. Lo, D. Kwong, 2006 .

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

H. B. Yao, W. D. Wang, D. Chi, 2004 .

Interplay Between Grain Boundary Grooving, Stress, and Dealloying in the Agglomeration of NiSi1 − x Ge x Films

H. B. Yao, D. Chi, D. Mangelinck, 2006, cond-mat/0605451.

Probing Ge Segregation in NiSi1 − u Ge u Using Micro-Raman Spectroscopy

H. B. Yao, D. Chi, S. Tripathy, 2004 .

Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts

H. B. Yao, D. Kwong, D. Chi, 2006 .

Pt-Germanide Schottky source/drain Germanium p-MOSFET with HfO/sub 2/ gate dielectric and TaN gate electrode

H. B. Yao, M.B. Yu, D. Kwong, 2006, IEEE Electron Device Letters.

Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

H. B. Yao, D. Chi, S.J. Lee, 2007, 2007 International Workshop on Junction Technology.