A. Khoshakhlagh

发表

Lasing characteristics of GaSb∕GaAs self-assembled quantum dots embedded in an InGaAs quantum well

Diana L. Huffaker, Arezou Khoshakhlagh, L. R. Dawson, 2007 .

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

D. Huffaker, G. Balakrishnan, A. Khoshakhlagh, 2006 .

Manufacturing of 100mm diameter GaSb substrates for advanced space based applications

Arezou Khoshakhlagh, Cory J. Hill, L. P. Allen, 2012, OPTO.

Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Diana L. Huffaker, Arezou Khoshakhlagh, L. R. Dawson, 2007 .

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

M. N. Kutty, S. Krishna, E. Plis, 2010 .

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Diana L. Huffaker, Arezou Khoshakhlagh, L. R. Dawson, 2005 .

Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric

S. Banerjee, D. Shahrjerdi, D. Huffaker, 2008 .

InAs/GaSb strained layer superlattice detectors with nBn design

S. Krishna, E. Plis, A. Khoshakhlagh, 2009 .

Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design

Arezou Khoshakhlagh, H. S. Kim, Elena Plis, 2009, Defense + Commercial Sensing.

Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (̃8 μm) infrared detection

Arezou Khoshakhlagh, Elena Plis, Stephen Myers, 2009 .