K. Kaska

Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

M. Moll, M. Fahrer, K. Kaska, 2010 .

Proton irradiation results of p+/n−/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion

J. Härkönen, P. Luukka, E. Tuovinen, 2005 .

Nanostructuring surfaces with slow multiply-charged ions

I. Gebeshuber, F. Aumayr, H. Winter, 2006, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics.