Norihiko Ui

High-Power GaN HEMT for Cellular Base Stations

Norihiko Ui, 2016 .

A 80W2-stage GaNHEMT Doherty Amplifier with-5OdBc ACLR, 42%Efficiency 32dBGainwithDPD forW-CDMA Basestation

Norihiko Ui, Hiroaki SanoandSeigo Sano, 2009 .

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Valeria Vadala, Giorgio Vannini, Norihiko Ui, 2020, IEEE Transactions on Microwave Theory and Techniques.

A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations

Hiroaki Deguchi, Norihiko Ui, Kaname Ebihara, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Ruggedness and reliability of GaN HEMT

Norihiko Ui, Kaname Ebihara, Atsushi Nitta, 2011, 2011 6th European Microwave Integrated Circuit Conference.

A 2.6GHz band 537W peak power GaN HEMT asymmetric Doherty amplifier with 48% drain efficiency at 7dB

Norihiko Ui, Naoki Watanabe, Kaname Ebihara, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

A L-BAND 50-WATT GaAs Power FET with 58% power added efficiency

Norihiko Ui, Hisanori Hayashi, Toshiaki Saito, 2000 .

High power and high efficiency GaN-HEMT for microwave communication applications

Norihiko Ui, Seigo Sano, Kazutaka Inoue, 2011, 2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications.

A 65 % drain efficiency GaN HEMT with 200 W peak power for 20 V to 65 V envelope tracking base station amplifier

Norihiko Ui, Seigo Sano, Kazutaka Inoue, 2011, 2011 IEEE MTT-S International Microwave Symposium.